Influence of Pinhole-Type Defects in AlGaN on rf Performance of AlGaN/GaN HFETs Grown by MOCVD

Jong Wook Kim, Jae Seung Lee, Jin H.O. Shin, Jae Hoon Lee, Sung H.O. Hahm, Jung Hee Lee, Chang Seok Kim, Jae Eung Oh, Moo Whan Shin

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Growth pressure-dependent generation of trap states in AlGaN/GaN heterostructures was analysed. AlGaN/GaN heterostructures were grown on sapphire substrates at two different pressures of AlGaN layer growth, 150 and 200 Torr, with other growth parameters unchanged. The measured Al mole fraction in AlGaN layer by XRD was 42 and 25%, respectively. The fabricated devices using AlGaN/GaN heterostructures exhibited quite different rf performance. The device with 25% Al mole fraction showed a lower maximum drain dc current, but more than two times higher rf output power density. The results of a pulsed I-V measurement revealed that severe trap-related rf current collapse existed in the devices with 42% Al mole fraction. These trap states are believed to be generated from pinhole-type defects as shown in the AFM surface image of AlGaN/GaN heterostructure with Al mole fraction of 42%.

Original languageEnglish
Pages (from-to)267-270
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume188
Issue number1
DOIs
Publication statusPublished - 2001 Nov 1

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Metallorganic chemical vapor deposition
pinholes
metalorganic chemical vapor deposition
Heterojunctions
Defects
defects
traps
Drain current
Sapphire
radiant flux density
sapphire
Aluminum Oxide
atomic force microscopy
aluminum gallium nitride
output
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kim, Jong Wook ; Lee, Jae Seung ; Shin, Jin H.O. ; Lee, Jae Hoon ; Hahm, Sung H.O. ; Lee, Jung Hee ; Kim, Chang Seok ; Oh, Jae Eung ; Shin, Moo Whan. / Influence of Pinhole-Type Defects in AlGaN on rf Performance of AlGaN/GaN HFETs Grown by MOCVD. In: Physica Status Solidi (A) Applied Research. 2001 ; Vol. 188, No. 1. pp. 267-270.
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Influence of Pinhole-Type Defects in AlGaN on rf Performance of AlGaN/GaN HFETs Grown by MOCVD. / Kim, Jong Wook; Lee, Jae Seung; Shin, Jin H.O.; Lee, Jae Hoon; Hahm, Sung H.O.; Lee, Jung Hee; Kim, Chang Seok; Oh, Jae Eung; Shin, Moo Whan.

In: Physica Status Solidi (A) Applied Research, Vol. 188, No. 1, 01.11.2001, p. 267-270.

Research output: Contribution to journalArticle

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AU - Kim, Jong Wook

AU - Lee, Jae Seung

AU - Shin, Jin H.O.

AU - Lee, Jae Hoon

AU - Hahm, Sung H.O.

AU - Lee, Jung Hee

AU - Kim, Chang Seok

AU - Oh, Jae Eung

AU - Shin, Moo Whan

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N2 - Growth pressure-dependent generation of trap states in AlGaN/GaN heterostructures was analysed. AlGaN/GaN heterostructures were grown on sapphire substrates at two different pressures of AlGaN layer growth, 150 and 200 Torr, with other growth parameters unchanged. The measured Al mole fraction in AlGaN layer by XRD was 42 and 25%, respectively. The fabricated devices using AlGaN/GaN heterostructures exhibited quite different rf performance. The device with 25% Al mole fraction showed a lower maximum drain dc current, but more than two times higher rf output power density. The results of a pulsed I-V measurement revealed that severe trap-related rf current collapse existed in the devices with 42% Al mole fraction. These trap states are believed to be generated from pinhole-type defects as shown in the AFM surface image of AlGaN/GaN heterostructure with Al mole fraction of 42%.

AB - Growth pressure-dependent generation of trap states in AlGaN/GaN heterostructures was analysed. AlGaN/GaN heterostructures were grown on sapphire substrates at two different pressures of AlGaN layer growth, 150 and 200 Torr, with other growth parameters unchanged. The measured Al mole fraction in AlGaN layer by XRD was 42 and 25%, respectively. The fabricated devices using AlGaN/GaN heterostructures exhibited quite different rf performance. The device with 25% Al mole fraction showed a lower maximum drain dc current, but more than two times higher rf output power density. The results of a pulsed I-V measurement revealed that severe trap-related rf current collapse existed in the devices with 42% Al mole fraction. These trap states are believed to be generated from pinhole-type defects as shown in the AFM surface image of AlGaN/GaN heterostructure with Al mole fraction of 42%.

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