Two-dimensional materials have recently been spotlighted, due to their unique properties in comparison with conventional bulk and thin-film materials. Among those materials, MoS2 is one of the promising candidates for the active layer of electronic devices because it shows high electron mobility and pristine band gap. In this paper, we focus on the evolution of the electrical property of the MoS2 field-effect transistor (FET) as a function of post-annealing temperature. The results indicate that the off current drastically decreased at 200°C and increased at 400°C while other factors, such as the mobility and threshold voltage, show little variation. We consider that the decreasing off current comes from the rearrangement of the MoS2 film and the elimination of the surface residue. Then, the increasing off current was caused by the change of the material's composition and adsorption of H2O and O2.
Bibliographical noteFunding Information:
This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea, under the ‘IT Consilience Creative Program’ (NIPA-2014-H0201-14-1002) supervised by the NIPA (National IT Industry Promotion Agency).
© 2015, Namgung et al.; licensee Springer.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics