Abstract
A solution-processable organosiloxane-based organic-inorganic hybrid gate dielectric layer for application in organic thin-film transistors has been synthesized by a sol-gel process. In the sol-gel derived hybrid film, owing to an incomplete condensation reaction, silanol groups serve as functional groups of the inorganic siloxane backbone. In order to investigate the influence of the silanol groups on the electrical performance of transistors with organosiloxane-based dielectrics, transistors employing hybrid dielectrics with different amounts of the silanol group were prepared and electrical performance parameters such as off-current, threshold voltage, field-effect mobility, and hysteresis were analysed.
| Original language | English |
|---|---|
| Article number | 025204 |
| Journal | Nanotechnology |
| Volume | 18 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2007 Jan 17 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering
Cite this
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Influence of silanol groups on the electrical performance of organic thin-film transistors utilizing organosiloxane-based organic-inorganic hybrid dielectrics. / Jeong, Sunho; Kim, Dongjo; Park, Bong Kyun; Lee, Sul; Moon, Joo Ho.
In: Nanotechnology, Vol. 18, No. 2, 025204, 17.01.2007.Research output: Contribution to journal › Article
TY - JOUR
T1 - Influence of silanol groups on the electrical performance of organic thin-film transistors utilizing organosiloxane-based organic-inorganic hybrid dielectrics
AU - Jeong, Sunho
AU - Kim, Dongjo
AU - Park, Bong Kyun
AU - Lee, Sul
AU - Moon, Joo Ho
PY - 2007/1/17
Y1 - 2007/1/17
N2 - A solution-processable organosiloxane-based organic-inorganic hybrid gate dielectric layer for application in organic thin-film transistors has been synthesized by a sol-gel process. In the sol-gel derived hybrid film, owing to an incomplete condensation reaction, silanol groups serve as functional groups of the inorganic siloxane backbone. In order to investigate the influence of the silanol groups on the electrical performance of transistors with organosiloxane-based dielectrics, transistors employing hybrid dielectrics with different amounts of the silanol group were prepared and electrical performance parameters such as off-current, threshold voltage, field-effect mobility, and hysteresis were analysed.
AB - A solution-processable organosiloxane-based organic-inorganic hybrid gate dielectric layer for application in organic thin-film transistors has been synthesized by a sol-gel process. In the sol-gel derived hybrid film, owing to an incomplete condensation reaction, silanol groups serve as functional groups of the inorganic siloxane backbone. In order to investigate the influence of the silanol groups on the electrical performance of transistors with organosiloxane-based dielectrics, transistors employing hybrid dielectrics with different amounts of the silanol group were prepared and electrical performance parameters such as off-current, threshold voltage, field-effect mobility, and hysteresis were analysed.
UR - http://www.scopus.com/inward/record.url?scp=33846794766&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33846794766&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/18/2/025204
DO - 10.1088/0957-4484/18/2/025204
M3 - Article
VL - 18
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 2
M1 - 025204
ER -