Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films

J. P. Kar, S. Kim, B. Shin, K. I. Park, K. J. Ahn, W. Lee, J. H. Cho, J. M. Myoung

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

Al-doped ZnO (AZO) films were deposited on glass substrates by pulsed DC sputtering technique with various working pressures in the range of 1-15 mTorr. A relationship between the morphological, mechanical and electrical properties of sputtered AZO films was studied as a function of sputtering pressure. The sputtered films were highly c-axis oriented. The n-type conductivity in AZO films was observed due to the substitutional doping of Al. AZO films deposited at 3 mTorr have shown an electrical resistivity of 2.2 × 10-4 Ω cm and high transmittance in visible range with better mechanical properties. For higher sputtering pressures an increase in the resistivity was observed due to a decrease in the mobility and the carrier concentration. The lower sputtering pressure was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices.

Original languageEnglish
Pages (from-to)1447-1450
Number of pages4
JournalSolid-State Electronics
Volume54
Issue number11
DOIs
Publication statusPublished - 2010 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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