Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films

J. P. Kar; S. Kim; B. Shin; K. I. Park; K. J. Ahn; W. Lee; J. H. Cho; J. M. Myoung

doi:10.1016/j.sse.2010.07.002

Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films

J. P. Kar, S. Kim, B. Shin, K. I. Park, K. J. Ahn, W. Lee, J. H. Cho, J. M. Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

54 Citations (Scopus)

Abstract

Al-doped ZnO (AZO) films were deposited on glass substrates by pulsed DC sputtering technique with various working pressures in the range of 1-15 mTorr. A relationship between the morphological, mechanical and electrical properties of sputtered AZO films was studied as a function of sputtering pressure. The sputtered films were highly c-axis oriented. The n-type conductivity in AZO films was observed due to the substitutional doping of Al. AZO films deposited at 3 mTorr have shown an electrical resistivity of 2.2 × 10^-4 Ω cm and high transmittance in visible range with better mechanical properties. For higher sputtering pressures an increase in the resistivity was observed due to a decrease in the mobility and the carrier concentration. The lower sputtering pressure was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices.

Original language	English
Pages (from-to)	1447-1450
Number of pages	4
Journal	Solid-State Electronics
Volume	54
Issue number	11
DOIs	https://doi.org/10.1016/j.sse.2010.07.002
Publication status	Published - 2010 Nov 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Kar, J. P., Kim, S., Shin, B., Park, K. I., Ahn, K. J., Lee, W., Cho, J. H., & Myoung, J. M. (2010). Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films. Solid-State Electronics, 54(11), 1447-1450. https://doi.org/10.1016/j.sse.2010.07.002

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AU - Shin, B.

AU - Park, K. I.

AU - Ahn, K. J.

AU - Lee, W.

AU - Cho, J. H.

AU - Myoung, J. M.

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AB - Al-doped ZnO (AZO) films were deposited on glass substrates by pulsed DC sputtering technique with various working pressures in the range of 1-15 mTorr. A relationship between the morphological, mechanical and electrical properties of sputtered AZO films was studied as a function of sputtering pressure. The sputtered films were highly c-axis oriented. The n-type conductivity in AZO films was observed due to the substitutional doping of Al. AZO films deposited at 3 mTorr have shown an electrical resistivity of 2.2 × 10-4 Ω cm and high transmittance in visible range with better mechanical properties. For higher sputtering pressures an increase in the resistivity was observed due to a decrease in the mobility and the carrier concentration. The lower sputtering pressure was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices.

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10.1016/j.sse.2010.07.002