Abstract
Al-doped ZnO (AZO) films were deposited on glass substrates by pulsed DC sputtering technique with various working pressures in the range of 1-15 mTorr. A relationship between the morphological, mechanical and electrical properties of sputtered AZO films was studied as a function of sputtering pressure. The sputtered films were highly c-axis oriented. The n-type conductivity in AZO films was observed due to the substitutional doping of Al. AZO films deposited at 3 mTorr have shown an electrical resistivity of 2.2 × 10-4 Ω cm and high transmittance in visible range with better mechanical properties. For higher sputtering pressures an increase in the resistivity was observed due to a decrease in the mobility and the carrier concentration. The lower sputtering pressure was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 1447-1450 |
| Number of pages | 4 |
| Journal | Solid-State Electronics |
| Volume | 54 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2010 Nov |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry