The electrical and optical properties of Ga-doped ZnO (GZO) thin films deposited at different substrate temperatures have been studied by a continuous composition spread (CCS) method. The full range of GZO compositions deposited at different substrate temperatures was explored to find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 9.6 × 10 -4 Ω cm and an average transmittance above 89% in the 400-700 nm wavelength regions were able to be formed at a substrate temperature of 100°C. Optimized composition of the GZO thin film which had the lowest resistivity and highest transmittance was found at 0.8 wt% Ga 2O 3 doped ZnO.
Bibliographical noteFunding Information:
This study was supported by “a grant-in-aid for R&D program (No. 10030068)” funded by the Ministry of Knowledge Economy and “the R&D program for Core Converging Research Center Program (no. 2009-0082023 )” funded by the Ministry of Education, Science and Technology, Republic of Korea.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry