Influence of substrate temperature on the electrical and optical properties of Ga-doped ZnO thin films fabricated by continuous composition spread

Keun Jung, Won Kook Choi, Seok Jin Yoon, Hyun Jae Kim, Ji Won Choi

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The electrical and optical properties of Ga-doped ZnO (GZO) thin films deposited at different substrate temperatures have been studied by a continuous composition spread (CCS) method. The full range of GZO compositions deposited at different substrate temperatures was explored to find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 9.6 × 10 -4 Ω cm and an average transmittance above 89% in the 400-700 nm wavelength regions were able to be formed at a substrate temperature of 100°C. Optimized composition of the GZO thin film which had the lowest resistivity and highest transmittance was found at 0.8 wt% Ga 2O 3 doped ZnO.

Original languageEnglish
Pages (from-to)S605-S608
JournalCeramics International
Volume38
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Electric properties
Optical properties
Thin films
Substrates
Chemical analysis
Temperature
Wavelength

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

@article{87a2e29cd95d42959db3eeb82e75c160,
title = "Influence of substrate temperature on the electrical and optical properties of Ga-doped ZnO thin films fabricated by continuous composition spread",
abstract = "The electrical and optical properties of Ga-doped ZnO (GZO) thin films deposited at different substrate temperatures have been studied by a continuous composition spread (CCS) method. The full range of GZO compositions deposited at different substrate temperatures was explored to find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 9.6 × 10 -4 Ω cm and an average transmittance above 89{\%} in the 400-700 nm wavelength regions were able to be formed at a substrate temperature of 100°C. Optimized composition of the GZO thin film which had the lowest resistivity and highest transmittance was found at 0.8 wt{\%} Ga 2O 3 doped ZnO.",
author = "Keun Jung and Choi, {Won Kook} and Yoon, {Seok Jin} and Kim, {Hyun Jae} and Choi, {Ji Won}",
year = "2012",
month = "1",
day = "1",
doi = "10.1016/j.ceramint.2011.05.107",
language = "English",
volume = "38",
pages = "S605--S608",
journal = "Ceramics International",
issn = "0272-8842",
publisher = "Elsevier Limited",
number = "SUPPL. 1",

}

Influence of substrate temperature on the electrical and optical properties of Ga-doped ZnO thin films fabricated by continuous composition spread. / Jung, Keun; Choi, Won Kook; Yoon, Seok Jin; Kim, Hyun Jae; Choi, Ji Won.

In: Ceramics International, Vol. 38, No. SUPPL. 1, 01.01.2012, p. S605-S608.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of substrate temperature on the electrical and optical properties of Ga-doped ZnO thin films fabricated by continuous composition spread

AU - Jung, Keun

AU - Choi, Won Kook

AU - Yoon, Seok Jin

AU - Kim, Hyun Jae

AU - Choi, Ji Won

PY - 2012/1/1

Y1 - 2012/1/1

N2 - The electrical and optical properties of Ga-doped ZnO (GZO) thin films deposited at different substrate temperatures have been studied by a continuous composition spread (CCS) method. The full range of GZO compositions deposited at different substrate temperatures was explored to find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 9.6 × 10 -4 Ω cm and an average transmittance above 89% in the 400-700 nm wavelength regions were able to be formed at a substrate temperature of 100°C. Optimized composition of the GZO thin film which had the lowest resistivity and highest transmittance was found at 0.8 wt% Ga 2O 3 doped ZnO.

AB - The electrical and optical properties of Ga-doped ZnO (GZO) thin films deposited at different substrate temperatures have been studied by a continuous composition spread (CCS) method. The full range of GZO compositions deposited at different substrate temperatures was explored to find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 9.6 × 10 -4 Ω cm and an average transmittance above 89% in the 400-700 nm wavelength regions were able to be formed at a substrate temperature of 100°C. Optimized composition of the GZO thin film which had the lowest resistivity and highest transmittance was found at 0.8 wt% Ga 2O 3 doped ZnO.

UR - http://www.scopus.com/inward/record.url?scp=84655162079&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84655162079&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2011.05.107

DO - 10.1016/j.ceramint.2011.05.107

M3 - Article

AN - SCOPUS:84655162079

VL - 38

SP - S605-S608

JO - Ceramics International

JF - Ceramics International

SN - 0272-8842

IS - SUPPL. 1

ER -