Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor

Yunseok Jang, Do Hwan Kim, Yeong Don Park, Jeong Ho Cho, Minkyu Hwang, Kilwon Cho

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The mobility of pentacene thin-film transistors (TFTs) is correlated with the dielectric properties of their insulators. We varied the dielectric properties of the poly(4-vinylphenol) insulators of such TFTs by changing the molar ratio of the prepolymer/cross-linking agent while keeping the surface potential of the insulator surface constant. It was found that the field-effect mobility of the pentacene TFTs increases with increases in the dielectric constant of the insulators. A small increase in the dielectric constant of the insulator (a 20% increase, 3.6-4.3) was found to result in a dramatic increase in the field-effect mobility of pentacene TFTs by a factor of 3 (0.26 to 0.81 cm2 V s).

Original languageEnglish
Article number152105
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2005 Oct 10


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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