Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor

Yunseok Jang, Do Hwan Kim, Yeong Don Park, Jeong Ho Cho, Minkyu Hwang, Kilwon Cho

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

The mobility of pentacene thin-film transistors (TFTs) is correlated with the dielectric properties of their insulators. We varied the dielectric properties of the poly(4-vinylphenol) insulators of such TFTs by changing the molar ratio of the prepolymer/cross-linking agent while keeping the surface potential of the insulator surface constant. It was found that the field-effect mobility of the pentacene TFTs increases with increases in the dielectric constant of the insulators. A small increase in the dielectric constant of the insulator (a 20% increase, 3.6-4.3) was found to result in a dramatic increase in the field-effect mobility of pentacene TFTs by a factor of 3 (0.26 to 0.81 cm2 V s).

Original languageEnglish
Article number152105
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number15
DOIs
Publication statusPublished - 2005 Oct 10

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phenols
transistors
insulators
permittivity
thin films
dielectric properties
prepolymers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Jang, Yunseok ; Kim, Do Hwan ; Park, Yeong Don ; Cho, Jeong Ho ; Hwang, Minkyu ; Cho, Kilwon. / Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor. In: Applied Physics Letters. 2005 ; Vol. 87, No. 15. pp. 1-3.
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Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor. / Jang, Yunseok; Kim, Do Hwan; Park, Yeong Don; Cho, Jeong Ho; Hwang, Minkyu; Cho, Kilwon.

In: Applied Physics Letters, Vol. 87, No. 15, 152105, 10.10.2005, p. 1-3.

Research output: Contribution to journalArticle

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AU - Jang, Yunseok

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AU - Hwang, Minkyu

AU - Cho, Kilwon

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AB - The mobility of pentacene thin-film transistors (TFTs) is correlated with the dielectric properties of their insulators. We varied the dielectric properties of the poly(4-vinylphenol) insulators of such TFTs by changing the molar ratio of the prepolymer/cross-linking agent while keeping the surface potential of the insulator surface constant. It was found that the field-effect mobility of the pentacene TFTs increases with increases in the dielectric constant of the insulators. A small increase in the dielectric constant of the insulator (a 20% increase, 3.6-4.3) was found to result in a dramatic increase in the field-effect mobility of pentacene TFTs by a factor of 3 (0.26 to 0.81 cm2 V s).

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