Influence of the ion-to-atom ratio on the structure of CeO2 buffer layer by ion beam assisted e-beam evaporation

Chang Su Kim, Sung Jin Jo, Woo Jin Kim, Won Hoe Koo, Hong Koo Baik, Se Jong Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Using ion-beam assisted e-beam evaporation with the ion beam directed at 55°to the normal of the film plane, (200) oriented CeO2 films with biaxial texture were deposited on Hastelloy C276 substrates at room temperature. The crystalline quality and in-plane orientation of films was investigated by X-ray diffraction 2θ-scan and Φ-scan, atomic force microscopy (AFM). It was shown that the in-plane and out-of-plane textures of the CeO2 films were controlled by the deposition parameters. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.

Original languageEnglish
Pages (from-to)6519-6521
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number9 A
DOIs
Publication statusPublished - 2005 Sep 8

Fingerprint

Buffer layers
Ion beams
Evaporation
buffers
ion beams
evaporation
Atoms
Ions
Hastelloy (trademark)
atoms
ions
textures
Textures
thickness ratio
Deposition rates
Crystal orientation
ion currents
Film thickness
Atomic force microscopy
film thickness

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Influence of the ion-to-atom ratio on the structure of CeO2 buffer layer by ion beam assisted e-beam evaporation",
abstract = "Using ion-beam assisted e-beam evaporation with the ion beam directed at 55°to the normal of the film plane, (200) oriented CeO2 films with biaxial texture were deposited on Hastelloy C276 substrates at room temperature. The crystalline quality and in-plane orientation of films was investigated by X-ray diffraction 2θ-scan and Φ-scan, atomic force microscopy (AFM). It was shown that the in-plane and out-of-plane textures of the CeO2 films were controlled by the deposition parameters. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.",
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Influence of the ion-to-atom ratio on the structure of CeO2 buffer layer by ion beam assisted e-beam evaporation. / Kim, Chang Su; Jo, Sung Jin; Kim, Woo Jin; Koo, Won Hoe; Baik, Hong Koo; Lee, Se Jong.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 9 A, 08.09.2005, p. 6519-6521.

Research output: Contribution to journalArticle

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AU - Baik, Hong Koo

AU - Lee, Se Jong

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AB - Using ion-beam assisted e-beam evaporation with the ion beam directed at 55°to the normal of the film plane, (200) oriented CeO2 films with biaxial texture were deposited on Hastelloy C276 substrates at room temperature. The crystalline quality and in-plane orientation of films was investigated by X-ray diffraction 2θ-scan and Φ-scan, atomic force microscopy (AFM). It was shown that the in-plane and out-of-plane textures of the CeO2 films were controlled by the deposition parameters. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.

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