Influence of the oxygen concentration of YSZ gate dielectric layer on the low voltage operating pentacene thin film transistor

Chang Su Kim, Woo Jin Kim, Sung Jin Jo, Sung Won Lee, Se Jong Lee, Hong Koo Baik

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report on the influence of oxygen concentration on structural and electrical properties of the amorphous yttria-stabilized zirconia (YSZ) thin films which are the potential high- k gate dielectric material of organic thin film transistors (OTFTs). The films were prepared by the E-beam evaporation process. To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, X-ray diffraction, X-ray photoelectron spectroscopy, current density-electric field, current-voltage were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

Original languageEnglish
Pages (from-to)G96-G99
JournalElectrochemical and Solid-State Letters
Volume9
Issue number3
DOIs
Publication statusPublished - 2006 Jan 27

Fingerprint

Yttria stabilized zirconia
Gate dielectrics
Thin film transistors
yttria-stabilized zirconia
low voltage
transistors
Oxygen vacancies
Oxygen
Structural properties
Electric properties
Electric potential
oxygen
Current density
thin films
Flow rate
Leakage currents
Oxides
flow velocity
electrical properties
current density

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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Influence of the oxygen concentration of YSZ gate dielectric layer on the low voltage operating pentacene thin film transistor. / Kim, Chang Su; Kim, Woo Jin; Jo, Sung Jin; Lee, Sung Won; Lee, Se Jong; Baik, Hong Koo.

In: Electrochemical and Solid-State Letters, Vol. 9, No. 3, 27.01.2006, p. G96-G99.

Research output: Contribution to journalArticle

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AU - Baik, Hong Koo

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