We report on the influence of oxygen concentration on structural and electrical properties of the amorphous yttria-stabilized zirconia (YSZ) thin films which are the potential high- k gate dielectric material of organic thin film transistors (OTFTs). The films were prepared by the E-beam evaporation process. To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, X-ray diffraction, X-ray photoelectron spectroscopy, current density-electric field, current-voltage were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2006|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering