We fabricated thin-film transistors (TFTs) with a Zr-doped zinc tin oxide (ZZTO) channel layer by the sol-gel process. To obtain optimal process conditions, ZZTO TFT was fabricated as a function of annealing temperatures. The performance of the ZZTO TFTs fabricated at annealing temperatures lower than 500 °C, was poor. This could be attributed to the insufficient energy available for M-OH dehydroxylation and condensation of multi-component oxides. The linear mobility, subthreshold gate swing (S.S), threshold voltage, and on-to-off current ratio of the ZZTO TFT annealed at 500 °C were 4.02 cm 2 V-1 s-1, 0.94 V/decade, 3.13 V, and >106, respectively.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [no. R0A-2007-000-10044-0(2007) ], and Samsung electronics.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)