Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors

You Seung Rim, Dong Lim Kim, Woong Hee Jeong, Si Joon Kim, Bo Sung Kim, Hyun Jae Kim

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Abstract

We fabricated thin-film transistors (TFTs) with a Zr-doped zinc tin oxide (ZZTO) channel layer by the sol-gel process. To obtain optimal process conditions, ZZTO TFT was fabricated as a function of annealing temperatures. The performance of the ZZTO TFTs fabricated at annealing temperatures lower than 500 °C, was poor. This could be attributed to the insufficient energy available for M-OH dehydroxylation and condensation of multi-component oxides. The linear mobility, subthreshold gate swing (S.S), threshold voltage, and on-to-off current ratio of the ZZTO TFT annealed at 500 °C were 4.02 cm 2 V-1 s-1, 0.94 V/decade, 3.13 V, and >106, respectively.

Original languageEnglish
Pages (from-to)S258-S261
JournalCurrent Applied Physics
Volume11
Issue number1 SUPPL.
DOIs
Publication statusPublished - 2011 Jan 1

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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