Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors

You Seung Rim; Dong Lim Kim; Woong Hee Jeong; Si Joon Kim; Bo Sung Kim; Hyun Jae Kim

doi:10.1016/j.cap.2010.11.096

Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors

You Seung Rim, Dong Lim Kim, Woong Hee Jeong, Si Joon Kim, Bo Sung Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We fabricated thin-film transistors (TFTs) with a Zr-doped zinc tin oxide (ZZTO) channel layer by the sol-gel process. To obtain optimal process conditions, ZZTO TFT was fabricated as a function of annealing temperatures. The performance of the ZZTO TFTs fabricated at annealing temperatures lower than 500 °C, was poor. This could be attributed to the insufficient energy available for M-OH dehydroxylation and condensation of multi-component oxides. The linear mobility, subthreshold gate swing (S.S), threshold voltage, and on-to-off current ratio of the ZZTO TFT annealed at 500 °C were 4.02 cm ² V^-1 s^-1, 0.94 V/decade, 3.13 V, and >10⁶, respectively.

Original language	English
Pages (from-to)	S258-S261
Journal	Current Applied Physics
Volume	11
Issue number	1 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2010.11.096
Publication status	Published - 2011 Jan

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [no. R0A-2007-000-10044-0(2007) ], and Samsung electronics.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2010.11.096

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title = "Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors",

abstract = "We fabricated thin-film transistors (TFTs) with a Zr-doped zinc tin oxide (ZZTO) channel layer by the sol-gel process. To obtain optimal process conditions, ZZTO TFT was fabricated as a function of annealing temperatures. The performance of the ZZTO TFTs fabricated at annealing temperatures lower than 500 °C, was poor. This could be attributed to the insufficient energy available for M-OH dehydroxylation and condensation of multi-component oxides. The linear mobility, subthreshold gate swing (S.S), threshold voltage, and on-to-off current ratio of the ZZTO TFT annealed at 500 °C were 4.02 cm 2 V-1 s-1, 0.94 V/decade, 3.13 V, and >106, respectively.",

author = "Rim, {You Seung} and Kim, {Dong Lim} and Jeong, {Woong Hee} and Kim, {Si Joon} and Kim, {Bo Sung} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [no. R0A-2007-000-10044-0(2007) ], and Samsung electronics.",

year = "2011",

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AU - Rim, You Seung

AU - Kim, Dong Lim

AU - Jeong, Woong Hee

AU - Kim, Si Joon

AU - Kim, Bo Sung

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [no. R0A-2007-000-10044-0(2007) ], and Samsung electronics.

PY - 2011/1

Y1 - 2011/1

N2 - We fabricated thin-film transistors (TFTs) with a Zr-doped zinc tin oxide (ZZTO) channel layer by the sol-gel process. To obtain optimal process conditions, ZZTO TFT was fabricated as a function of annealing temperatures. The performance of the ZZTO TFTs fabricated at annealing temperatures lower than 500 °C, was poor. This could be attributed to the insufficient energy available for M-OH dehydroxylation and condensation of multi-component oxides. The linear mobility, subthreshold gate swing (S.S), threshold voltage, and on-to-off current ratio of the ZZTO TFT annealed at 500 °C were 4.02 cm 2 V-1 s-1, 0.94 V/decade, 3.13 V, and >106, respectively.

AB - We fabricated thin-film transistors (TFTs) with a Zr-doped zinc tin oxide (ZZTO) channel layer by the sol-gel process. To obtain optimal process conditions, ZZTO TFT was fabricated as a function of annealing temperatures. The performance of the ZZTO TFTs fabricated at annealing temperatures lower than 500 °C, was poor. This could be attributed to the insufficient energy available for M-OH dehydroxylation and condensation of multi-component oxides. The linear mobility, subthreshold gate swing (S.S), threshold voltage, and on-to-off current ratio of the ZZTO TFT annealed at 500 °C were 4.02 cm 2 V-1 s-1, 0.94 V/decade, 3.13 V, and >106, respectively.

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Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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