Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors

You Seung Rim, Dong Lim Kim, Woong Hee Jeong, Si Joon Kim, Bo Sung Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We fabricated thin-film transistors (TFTs) with a Zr-doped zinc tin oxide (ZZTO) channel layer by the sol-gel process. To obtain optimal process conditions, ZZTO TFT was fabricated as a function of annealing temperatures. The performance of the ZZTO TFTs fabricated at annealing temperatures lower than 500 °C, was poor. This could be attributed to the insufficient energy available for M-OH dehydroxylation and condensation of multi-component oxides. The linear mobility, subthreshold gate swing (S.S), threshold voltage, and on-to-off current ratio of the ZZTO TFT annealed at 500 °C were 4.02 cm 2 V-1 s-1, 0.94 V/decade, 3.13 V, and >106, respectively.

Original languageEnglish
Pages (from-to)S258-S261
JournalCurrent Applied Physics
Volume11
Issue number1 SUPPL.
DOIs
Publication statusPublished - 2011 Jan 1

Fingerprint

Thin film transistors
Zinc oxide
Tin oxides
zinc oxides
tin oxides
transistors
Oxide films
thin films
Annealing
annealing
sol-gel processes
Threshold voltage
threshold voltage
Oxides
Sol-gel process
Condensation
condensation
Temperature
oxides
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Rim, You Seung ; Kim, Dong Lim ; Jeong, Woong Hee ; Kim, Si Joon ; Kim, Bo Sung ; Kim, Hyun Jae. / Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors. In: Current Applied Physics. 2011 ; Vol. 11, No. 1 SUPPL. pp. S258-S261.
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Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors. / Rim, You Seung; Kim, Dong Lim; Jeong, Woong Hee; Kim, Si Joon; Kim, Bo Sung; Kim, Hyun Jae.

In: Current Applied Physics, Vol. 11, No. 1 SUPPL., 01.01.2011, p. S258-S261.

Research output: Contribution to journalArticle

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AU - Kim, Dong Lim

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AU - Kim, Hyun Jae

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AB - We fabricated thin-film transistors (TFTs) with a Zr-doped zinc tin oxide (ZZTO) channel layer by the sol-gel process. To obtain optimal process conditions, ZZTO TFT was fabricated as a function of annealing temperatures. The performance of the ZZTO TFTs fabricated at annealing temperatures lower than 500 °C, was poor. This could be attributed to the insufficient energy available for M-OH dehydroxylation and condensation of multi-component oxides. The linear mobility, subthreshold gate swing (S.S), threshold voltage, and on-to-off current ratio of the ZZTO TFT annealed at 500 °C were 4.02 cm 2 V-1 s-1, 0.94 V/decade, 3.13 V, and >106, respectively.

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