The formation of TiAs precipitates between TiSi2 with C54 structure and arsenic-doped polysilicon and the influence of TiAs and silicon resulting from the reaction TiSi2 + As → TiAs + 2Si on layer morphology degradation have been studied. The formation of TiAs precipitates has been revealed by X-ray diffraction in a sample annealed at 900 °C for 60 min and a sequential increase in sheet resistance with increasing annealing time has been observed. Cross-sectional scanning electron microscopy of the sample annealed for 60 min has shown irregular-shaped protrusions. Point analyses by Auger electron spectroscopy and cross-sectional transmission electron microscopy of the same sample have shown the presence of TiAs precipitates and extra silicon near the TiSi2-polysilicon interface under the protrusion area. From the results it has been found that TiAs precipitates and extra silicon resulting from the reaction TiSi2 + As → TiAs + 2Si lead to morphology degradation of this system.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry