Influence of TiAs precipitate formation on morphology degradation of the TiSi2/As-doped polysilicon system

Hyung Ho Park, Jeong Yong Lee, Kyoung Ik Cho, Mun Cheol Paek, Oh Joon Kwon, Chi Kyu Choi, Kee Soo Nam

Research output: Contribution to journalArticle

Abstract

The formation of TiAs precipitates between TiSi2 with C54 structure and arsenic-doped polysilicon and the influence of TiAs and silicon resulting from the reaction TiSi2 + As → TiAs + 2Si on layer morphology degradation have been studied. The formation of TiAs precipitates has been revealed by X-ray diffraction in a sample annealed at 900 °C for 60 min and a sequential increase in sheet resistance with increasing annealing time has been observed. Cross-sectional scanning electron microscopy of the sample annealed for 60 min has shown irregular-shaped protrusions. Point analyses by Auger electron spectroscopy and cross-sectional transmission electron microscopy of the same sample have shown the presence of TiAs precipitates and extra silicon near the TiSi2-polysilicon interface under the protrusion area. From the results it has been found that TiAs precipitates and extra silicon resulting from the reaction TiSi2 + As → TiAs + 2Si lead to morphology degradation of this system.

Original languageEnglish
Pages (from-to)168-171
Number of pages4
JournalThin Solid Films
Volume208
Issue number2
DOIs
Publication statusPublished - 1992 Feb 28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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