Abstract
The one-step hydrothermal method was used to synthesize Sn-doped TiO2 (Sn-TiO2) thin films, in which the variation in Sn content ranged from 0 to 7-wt % and, further, its influence on the performance of a dye-sensitized solar cell (DSSC) photoanode was studied. The deposited samples were analyzed by X-ray diffraction (XRD) and Raman spectroscopy, which confirmed the existence of the rutile phase of the synthesized samples with crystallite size ranges in between 20.1 to 22.3 nm. In addition, the bare and Sn-TiO2 thin films showed nanorod morphology. A reduction in the optical band gap from 2.78 to 2.62 eV was observed with increasing Sn content. The X-ray photoelectron spectroscopy (XPS) analysis confirmed Sn4+ was successfully replaced at the Ti4+ site. The 3-wt % Sn-TiO2 based DSSC showed the optimum efficiency of 4.01%, which was superior to 0.87% of bare and other doping concentrations of Sn-TiO2 based DSSCs. The present work reflects Sn-TiO2 as an advancing material with excellent capabilities, which can be used in photovoltaic energy conversion devices.
Original language | English |
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Article number | 6282 |
Journal | Materials |
Volume | 14 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2021 Nov 1 |
Bibliographical note
Funding Information:Acknowledgments: This work was supported by the National Research Foundation of Korea Grant funded by the Government of South Korea (NRF 2020R1A5A1019131). This research is also supported by the National Research Foundation of Korea (NRF) Korean government (2020R1A2C2004880). This work was also supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF-2018R1A6A1A03024334). The author SBW thankful to D. P. Nade, Rohit R. Powar, Sambhaji M. Pawar for fruitful discussion.
Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics