We grew Ge-SbTe films on glass substrates using RF sputtering deposition. We measured the dielectric function of the Ge-doped SbTe thin films in the infrared and visible spectral region. By applying linear extrapolation to the absorption coefficient, we obtained accurate band gap energy values, which decreased with increasing Te composition. Using the Drude model, we estimated their resistivity and mean scattering time. Compared to the Hall effect parameters of carrier concentration and mobility, we estimated the effective mass of holes for the Ge-SbTe thin films.
Bibliographical noteFunding Information:
The work at Kyung Hee University was supported by a grant from the National Research Foundation of Korea (no. 2011-0003052 ), the work at Yonsei University was supported by another grant from the National Research Foundation of Korea (no. 2011-0000990 ), and the work at KIST was supported by a grant from the Fundamental R&D Program for Core Technology of Materials, Ministry of Knowledge Economy, Republic of Korea . The work at Seoul National University was supported by the National Research Foundation of Korea (no. 2010-0020416 ).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry