Infrared spectroscopic ellipsometry of Ge-doped SbTe alloys

Tae Dong Kang, Kyung Ik Sim, Jae Hoon Kim, Zhe Wu, Byung Ki Cheong, Hosun Lee

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3 Citations (Scopus)

Abstract

We grew Ge-SbTe films on glass substrates using RF sputtering deposition. We measured the dielectric function of the Ge-doped SbTe thin films in the infrared and visible spectral region. By applying linear extrapolation to the absorption coefficient, we obtained accurate band gap energy values, which decreased with increasing Te composition. Using the Drude model, we estimated their resistivity and mean scattering time. Compared to the Hall effect parameters of carrier concentration and mobility, we estimated the effective mass of holes for the Ge-SbTe thin films.

Original languageEnglish
Pages (from-to)6221-6225
Number of pages5
JournalThin Solid Films
Volume520
Issue number19
DOIs
Publication statusPublished - 2012 Jul 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Kang, T. D., Sim, K. I., Kim, J. H., Wu, Z., Cheong, B. K., & Lee, H. (2012). Infrared spectroscopic ellipsometry of Ge-doped SbTe alloys. Thin Solid Films, 520(19), 6221-6225. https://doi.org/10.1016/j.tsf.2012.05.030