Infrared spectroscopic ellipsometry of Ge-doped SbTe alloys

Tae Dong Kang; Kyung Ik Sim; Jae Hoon Kim; Zhe Wu; Byung Ki Cheong; Hosun Lee

doi:10.1016/j.tsf.2012.05.030

Infrared spectroscopic ellipsometry of Ge-doped SbTe alloys

Tae Dong Kang, Kyung Ik Sim, Jae Hoon Kim, Zhe Wu, Byung Ki Cheong, Hosun Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We grew Ge-SbTe films on glass substrates using RF sputtering deposition. We measured the dielectric function of the Ge-doped SbTe thin films in the infrared and visible spectral region. By applying linear extrapolation to the absorption coefficient, we obtained accurate band gap energy values, which decreased with increasing Te composition. Using the Drude model, we estimated their resistivity and mean scattering time. Compared to the Hall effect parameters of carrier concentration and mobility, we estimated the effective mass of holes for the Ge-SbTe thin films.

Original language	English
Pages (from-to)	6221-6225
Number of pages	5
Journal	Thin Solid Films
Volume	520
Issue number	19
DOIs	https://doi.org/10.1016/j.tsf.2012.05.030
Publication status	Published - 2012 Jul 31

Bibliographical note

Funding Information:
The work at Kyung Hee University was supported by a grant from the National Research Foundation of Korea (no. 2011-0003052 ), the work at Yonsei University was supported by another grant from the National Research Foundation of Korea (no. 2011-0000990 ), and the work at KIST was supported by a grant from the Fundamental R&D Program for Core Technology of Materials, Ministry of Knowledge Economy, Republic of Korea . The work at Seoul National University was supported by the National Research Foundation of Korea (no. 2010-0020416 ).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Infrared spectroscopic ellipsometry of Ge-doped SbTe alloys",

abstract = "We grew Ge-SbTe films on glass substrates using RF sputtering deposition. We measured the dielectric function of the Ge-doped SbTe thin films in the infrared and visible spectral region. By applying linear extrapolation to the absorption coefficient, we obtained accurate band gap energy values, which decreased with increasing Te composition. Using the Drude model, we estimated their resistivity and mean scattering time. Compared to the Hall effect parameters of carrier concentration and mobility, we estimated the effective mass of holes for the Ge-SbTe thin films.",

author = "Kang, {Tae Dong} and Sim, {Kyung Ik} and Kim, {Jae Hoon} and Zhe Wu and Cheong, {Byung Ki} and Hosun Lee",

note = "Funding Information: The work at Kyung Hee University was supported by a grant from the National Research Foundation of Korea (no. 2011-0003052 ), the work at Yonsei University was supported by another grant from the National Research Foundation of Korea (no. 2011-0000990 ), and the work at KIST was supported by a grant from the Fundamental R&D Program for Core Technology of Materials, Ministry of Knowledge Economy, Republic of Korea . The work at Seoul National University was supported by the National Research Foundation of Korea (no. 2010-0020416 ).",

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doi = "10.1016/j.tsf.2012.05.030",

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AU - Kang, Tae Dong

AU - Sim, Kyung Ik

AU - Kim, Jae Hoon

AU - Wu, Zhe

AU - Cheong, Byung Ki

AU - Lee, Hosun

N1 - Funding Information: The work at Kyung Hee University was supported by a grant from the National Research Foundation of Korea (no. 2011-0003052 ), the work at Yonsei University was supported by another grant from the National Research Foundation of Korea (no. 2011-0000990 ), and the work at KIST was supported by a grant from the Fundamental R&D Program for Core Technology of Materials, Ministry of Knowledge Economy, Republic of Korea . The work at Seoul National University was supported by the National Research Foundation of Korea (no. 2010-0020416 ).

PY - 2012/7/31

Y1 - 2012/7/31

N2 - We grew Ge-SbTe films on glass substrates using RF sputtering deposition. We measured the dielectric function of the Ge-doped SbTe thin films in the infrared and visible spectral region. By applying linear extrapolation to the absorption coefficient, we obtained accurate band gap energy values, which decreased with increasing Te composition. Using the Drude model, we estimated their resistivity and mean scattering time. Compared to the Hall effect parameters of carrier concentration and mobility, we estimated the effective mass of holes for the Ge-SbTe thin films.

AB - We grew Ge-SbTe films on glass substrates using RF sputtering deposition. We measured the dielectric function of the Ge-doped SbTe thin films in the infrared and visible spectral region. By applying linear extrapolation to the absorption coefficient, we obtained accurate band gap energy values, which decreased with increasing Te composition. Using the Drude model, we estimated their resistivity and mean scattering time. Compared to the Hall effect parameters of carrier concentration and mobility, we estimated the effective mass of holes for the Ge-SbTe thin films.

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Infrared spectroscopic ellipsometry of Ge-doped SbTe alloys

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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