Infrared spectroscopy of the interface charge in a ZnO field-effect transistor

Jooyoun Kim, Sunghoon Jung, E. J. Choi, Kitae Kim, Kimoon Lee, Seongil Im

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We used far-infrared transmission spectroscopy to probe the electrostatically induced charge carriers in a ZnO field-effect transistor. The carrier absorption spectrum exhibits a non-Drude, incoherent conduction behavior at low gate-source voltages (VGS <40 V), which evolves toward a standard Drude behavior as VGS is increased. This change is explained successfully by a generalized Drude model. We find that the interface carriers undergo strong backscattering collisions during the channel conduction and the microscopic scattering angle changes with VGS.

Original languageEnglish
Article number241902
JournalApplied Physics Letters
Volume93
Issue number24
DOIs
Publication statusPublished - 2008 Dec 29

Fingerprint

field effect transistors
infrared spectroscopy
conduction
charge carriers
backscattering
absorption spectra
collisions
probes
electric potential
scattering
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Jooyoun ; Jung, Sunghoon ; Choi, E. J. ; Kim, Kitae ; Lee, Kimoon ; Im, Seongil. / Infrared spectroscopy of the interface charge in a ZnO field-effect transistor. In: Applied Physics Letters. 2008 ; Vol. 93, No. 24.
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Infrared spectroscopy of the interface charge in a ZnO field-effect transistor. / Kim, Jooyoun; Jung, Sunghoon; Choi, E. J.; Kim, Kitae; Lee, Kimoon; Im, Seongil.

In: Applied Physics Letters, Vol. 93, No. 24, 241902, 29.12.2008.

Research output: Contribution to journalArticle

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AU - Im, Seongil

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