Abstract
An In/Ga-free doping method of zinc oxide (ZnO) is demonstrated utilizing a printable charge transfer doping layer (CTDL) based on (3-aminopropyl) triethoxysilane (APS) molecules. The self-assembled APS molecules placed on top of ZnO thin films lead to n-type doping of ZnO and filling shallow electron traps, due to the strong electron-donating characteristics of the amine group in APS molecules. The CTDL doping can tune the threshold voltage and the mobility of the ZnO thin-film transistors (TFTs) as one varies the grafting density of the APS molecules and the thickness of the underneath ZnO thin films. From an optimized condition, high-performance ZnO TFTs can be achieved that exhibit an electron mobility of 4.2 cm2/(V s), a threshold voltage of 10.5 V, and an on/off current ratio larger than 107. More importantly, the method is applicable to simple inkjet processes, which lead to produce high-performance depletion load ZnO inverters through selective deposition of CTDL on ZnO thin films.
Original language | English |
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Pages (from-to) | 9765-9769 |
Number of pages | 5 |
Journal | ACS Applied Materials and Interfaces |
Volume | 5 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2013 Oct 9 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)