InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN

Chul Huh; Hyun Soo Kim; Sang Woo Kim; ji Myon Lee; Dong Joon Kim; in Hwan Lee; Seong ju Park

doi:10.1063/1.373092

InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN

Chul Huh, Hyun Soo Kim, Sang Woo Kim, ji Myon Lee, Dong Joon Kim, in Hwan Lee, Seong ju Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and [formula omitted] Ω cm², demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency.

Original language	English
Pages (from-to)	4464-4466
Number of pages	3
Journal	Journal of Applied Physics
Volume	87
Issue number	9
DOIs	https://doi.org/10.1063/1.373092
Publication status	Published - 2000 May 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.373092

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title = "InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN",

abstract = "The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and [formula omitted] Ω cm2, demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency.",

author = "Chul Huh and Kim, {Hyun Soo} and Kim, {Sang Woo} and Lee, {ji Myon} and Kim, {Dong Joon} and Lee, {in Hwan} and Park, {Seong ju}",

year = "2000",

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doi = "10.1063/1.373092",

language = "English",

volume = "87",

pages = "4464--4466",

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T1 - InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN

AU - Huh, Chul

AU - Kim, Hyun Soo

AU - Kim, Sang Woo

AU - Lee, ji Myon

AU - Kim, Dong Joon

AU - Lee, in Hwan

AU - Park, Seong ju

PY - 2000/5/1

Y1 - 2000/5/1

N2 - The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and [formula omitted] Ω cm2, demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency.

AB - The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and [formula omitted] Ω cm2, demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency.

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JF - Journal of Applied Physics

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ER -

InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN

Abstract

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