InGaZnO thin-film transistors with YHfZnO gate insulator by solution process

Si Joon Kim, Gun Hee Kim, Dong Lim Kim, Doo Na Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Thin-film transistors (TFTs) with the indium gallium zinc oxide (IGZO) as a channel layer and the yttrium hafnium zinc oxide (YHZO) as a gate insulator layer were fabricated and both of layers were deposited by solution process. YHZO solution was prepared by dissolving yttrium nitrate, hafnium chloride, and zinc acetate into 2-methoxyethanol with additional stabilizers. The spin coating and annealing procedures were repeated several times to obtain sufficient thickness for gate insulator in IGZO TFTs. The electrical characteristics of YHZO films were analyzed by capacitance-voltage and leakage current measurements. The dielectric constant was about 16.4 and leakage current density was about 6×10 -8 A/cm 2. In solutionprocessed IGZO TFTs with YHZO gate insulator, the field effect mobility, the on-to-off current ratio, the threshold voltage, and the subthreshold swing were 0.29 cm 2/Vs, ̃10 5, 3.47 V, and 1.26 V/decade, respectively.

Original languageEnglish
Pages (from-to)1668-1671
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume207
Issue number7
DOIs
Publication statusPublished - 2010 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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