InGaZnO thin-film transistors with YHfZnO gate insulator by solution process

Si Joon Kim, Gun Hee Kim, Dong Lim Kim, Doo Na Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Thin-film transistors (TFTs) with the indium gallium zinc oxide (IGZO) as a channel layer and the yttrium hafnium zinc oxide (YHZO) as a gate insulator layer were fabricated and both of layers were deposited by solution process. YHZO solution was prepared by dissolving yttrium nitrate, hafnium chloride, and zinc acetate into 2-methoxyethanol with additional stabilizers. The spin coating and annealing procedures were repeated several times to obtain sufficient thickness for gate insulator in IGZO TFTs. The electrical characteristics of YHZO films were analyzed by capacitance-voltage and leakage current measurements. The dielectric constant was about 16.4 and leakage current density was about 6×10 -8 A/cm 2. In solutionprocessed IGZO TFTs with YHZO gate insulator, the field effect mobility, the on-to-off current ratio, the threshold voltage, and the subthreshold swing were 0.29 cm 2/Vs, ̃10 5, 3.47 V, and 1.26 V/decade, respectively.

Original languageEnglish
Pages (from-to)1668-1671
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume207
Issue number7
DOIs
Publication statusPublished - 2010 Jul 1

Fingerprint

Zinc Oxide
Gates (transistor)
Thin film transistors
Zinc oxide
zinc oxides
Yttrium
Hafnium
transistors
hafnium oxides
insulators
yttrium
gallium oxides
Gallium
Indium
thin films
Oxide films
indium
Leakage currents
leakage
Zinc Acetate

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, Si Joon ; Kim, Gun Hee ; Kim, Dong Lim ; Kim, Doo Na ; Kim, Hyun Jae. / InGaZnO thin-film transistors with YHfZnO gate insulator by solution process. In: Physica Status Solidi (A) Applications and Materials Science. 2010 ; Vol. 207, No. 7. pp. 1668-1671.
@article{350cbc4dae5049ba8dd4f49e9872fa84,
title = "InGaZnO thin-film transistors with YHfZnO gate insulator by solution process",
abstract = "Thin-film transistors (TFTs) with the indium gallium zinc oxide (IGZO) as a channel layer and the yttrium hafnium zinc oxide (YHZO) as a gate insulator layer were fabricated and both of layers were deposited by solution process. YHZO solution was prepared by dissolving yttrium nitrate, hafnium chloride, and zinc acetate into 2-methoxyethanol with additional stabilizers. The spin coating and annealing procedures were repeated several times to obtain sufficient thickness for gate insulator in IGZO TFTs. The electrical characteristics of YHZO films were analyzed by capacitance-voltage and leakage current measurements. The dielectric constant was about 16.4 and leakage current density was about 6×10 -8 A/cm 2. In solutionprocessed IGZO TFTs with YHZO gate insulator, the field effect mobility, the on-to-off current ratio, the threshold voltage, and the subthreshold swing were 0.29 cm 2/Vs, ̃10 5, 3.47 V, and 1.26 V/decade, respectively.",
author = "Kim, {Si Joon} and Kim, {Gun Hee} and Kim, {Dong Lim} and Kim, {Doo Na} and Kim, {Hyun Jae}",
year = "2010",
month = "7",
day = "1",
doi = "10.1002/pssa.200983724",
language = "English",
volume = "207",
pages = "1668--1671",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",
number = "7",

}

InGaZnO thin-film transistors with YHfZnO gate insulator by solution process. / Kim, Si Joon; Kim, Gun Hee; Kim, Dong Lim; Kim, Doo Na; Kim, Hyun Jae.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 207, No. 7, 01.07.2010, p. 1668-1671.

Research output: Contribution to journalArticle

TY - JOUR

T1 - InGaZnO thin-film transistors with YHfZnO gate insulator by solution process

AU - Kim, Si Joon

AU - Kim, Gun Hee

AU - Kim, Dong Lim

AU - Kim, Doo Na

AU - Kim, Hyun Jae

PY - 2010/7/1

Y1 - 2010/7/1

N2 - Thin-film transistors (TFTs) with the indium gallium zinc oxide (IGZO) as a channel layer and the yttrium hafnium zinc oxide (YHZO) as a gate insulator layer were fabricated and both of layers were deposited by solution process. YHZO solution was prepared by dissolving yttrium nitrate, hafnium chloride, and zinc acetate into 2-methoxyethanol with additional stabilizers. The spin coating and annealing procedures were repeated several times to obtain sufficient thickness for gate insulator in IGZO TFTs. The electrical characteristics of YHZO films were analyzed by capacitance-voltage and leakage current measurements. The dielectric constant was about 16.4 and leakage current density was about 6×10 -8 A/cm 2. In solutionprocessed IGZO TFTs with YHZO gate insulator, the field effect mobility, the on-to-off current ratio, the threshold voltage, and the subthreshold swing were 0.29 cm 2/Vs, ̃10 5, 3.47 V, and 1.26 V/decade, respectively.

AB - Thin-film transistors (TFTs) with the indium gallium zinc oxide (IGZO) as a channel layer and the yttrium hafnium zinc oxide (YHZO) as a gate insulator layer were fabricated and both of layers were deposited by solution process. YHZO solution was prepared by dissolving yttrium nitrate, hafnium chloride, and zinc acetate into 2-methoxyethanol with additional stabilizers. The spin coating and annealing procedures were repeated several times to obtain sufficient thickness for gate insulator in IGZO TFTs. The electrical characteristics of YHZO films were analyzed by capacitance-voltage and leakage current measurements. The dielectric constant was about 16.4 and leakage current density was about 6×10 -8 A/cm 2. In solutionprocessed IGZO TFTs with YHZO gate insulator, the field effect mobility, the on-to-off current ratio, the threshold voltage, and the subthreshold swing were 0.29 cm 2/Vs, ̃10 5, 3.47 V, and 1.26 V/decade, respectively.

UR - http://www.scopus.com/inward/record.url?scp=77955625472&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955625472&partnerID=8YFLogxK

U2 - 10.1002/pssa.200983724

DO - 10.1002/pssa.200983724

M3 - Article

AN - SCOPUS:77955625472

VL - 207

SP - 1668

EP - 1671

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 7

ER -