Inhibited nonradiative decay at all exciton densities in monolayer semiconductors

Hyungjin Kim, Shiekh Zia Uddin, Naoki Higashitarumizu, Eran Rabani, Ali Javey

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a performance metric that directly dictates the maximum device efficiency. Although transition metal dichalcogenide (TMDC) monolayers exhibit near-unity PL QY at low exciton densities, nonradiative exciton-exciton annihilation (EEA) enhanced by van-Hove singularity (VHS) rapidly degrades their PL QY at high exciton densities and limits their utility in practical applications. Here, by applying small mechanical strain (less than 1%), we circumvented VHS resonance and markedly suppressed EEA in monolayer TMDCs, resulting in near-unity PL QY at all exciton densities despite the presence of a high native defect density. Our findings can enable light-emitting devices that retain high efficiency at all brightness levels.

Original languageEnglish
Pages (from-to)448-452
Number of pages5
JournalScience
Volume373
Issue number6553
DOIs
Publication statusPublished - 2021 Jul 23

Bibliographical note

Publisher Copyright:
© 2021 American Association for the Advancement of Science. All rights reserved.

All Science Journal Classification (ASJC) codes

  • General

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