The electrical conductance characteristics due to tunneling of Au films on glass substrates as a function of deposition rate and Ar+ ion current density have been investigated by in situ measurement. The onset thickness for conductance was 8.5-29 Å lower than that obtained by other researchers due to the use of a nozzle beam in this study. The degree of agglomeration, t, attained its maximum value at a deposition rate R = 1.0 Å/s. The degree of coalescence increased with increasing deposition rate. The onset thickness for conductance decreased to a nearly linear line with increasing ion beam irradiation.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||1 A/B|
|Publication status||Published - 2004 Jan 15|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)