Initial stage growth during plasma-enhanced atomic layer deposition of cobalt

Han Bo Ram Lee, Yong Jun Park, Sunggi Baik, Hyungjun Kim

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The initial growth of Co thin films during plasma-enhanced atomic layer deposition (PE-ALD) is investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), and synchrotron radiation X-ray reflectivity (SR-XRR). For the PE-ALD of Co, CoCp 2 and NH 3 plasma were used as precursor and reactant, respectively. From XRR simulation, the growth rate at the initial stage of growth did not linearly increase with growth cycles, showing deviation from ideal ALD growth. The low density of PE-ALD-produced Co film up to 100 cycles is observed from XRR and confirmed by AFM and SEM results. The growth behavior of Co is explained by island growth under substrate-inhibited growth mode. The initial growth of Co thin films during plasma enhanced atomic layer deposition by using Co metal organic precursor and NH 3 plasma counter reactant was investigated by atomic force microscopy, scanning electron microscopy, and synchrotron radiation X-ray reflectivity. The growth behavior of Co was explained by island growth of Co under substrate-inhibited growth mode.

Original languageEnglish
Pages (from-to)41-45
Number of pages5
JournalChemical Vapor Deposition
Volume18
Issue number1-3
DOIs
Publication statusPublished - 2012 Mar 1

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Cobalt
cobalt
Plasmas
Atomic force microscopy
Synchrotron radiation
atomic force microscopy
Scanning electron microscopy
scanning electron microscopy
synchrotron radiation
X rays
Thin films
reflectance
cycles
Substrates
thin films
Metals
counters
x rays

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Surfaces and Interfaces
  • Process Chemistry and Technology

Cite this

Lee, Han Bo Ram ; Park, Yong Jun ; Baik, Sunggi ; Kim, Hyungjun. / Initial stage growth during plasma-enhanced atomic layer deposition of cobalt. In: Chemical Vapor Deposition. 2012 ; Vol. 18, No. 1-3. pp. 41-45.
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Initial stage growth during plasma-enhanced atomic layer deposition of cobalt. / Lee, Han Bo Ram; Park, Yong Jun; Baik, Sunggi; Kim, Hyungjun.

In: Chemical Vapor Deposition, Vol. 18, No. 1-3, 01.03.2012, p. 41-45.

Research output: Contribution to journalArticle

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AB - The initial growth of Co thin films during plasma-enhanced atomic layer deposition (PE-ALD) is investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), and synchrotron radiation X-ray reflectivity (SR-XRR). For the PE-ALD of Co, CoCp 2 and NH 3 plasma were used as precursor and reactant, respectively. From XRR simulation, the growth rate at the initial stage of growth did not linearly increase with growth cycles, showing deviation from ideal ALD growth. The low density of PE-ALD-produced Co film up to 100 cycles is observed from XRR and confirmed by AFM and SEM results. The growth behavior of Co is explained by island growth under substrate-inhibited growth mode. The initial growth of Co thin films during plasma enhanced atomic layer deposition by using Co metal organic precursor and NH 3 plasma counter reactant was investigated by atomic force microscopy, scanning electron microscopy, and synchrotron radiation X-ray reflectivity. The growth behavior of Co was explained by island growth of Co under substrate-inhibited growth mode.

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