Ink-jet-printed zinctinoxide thin-film transistors and circuits with rapid thermal annealing process

Yong Hoon Kim, Kwang Ho Kim, Min Suk Oh, Hyun Jae Kim, Jeong In Han, Min Koo Han, Sung Kyu Park

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Abstract

We report on high-performance ink-jet-printed amorphous zinctinoxide (α-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed α-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed α-ZTO TFTs (W/L =100μm/10\μm) have shown a carrier mobility of 4.98 cm2Vs with an on/off current ratio that is greater than 109 and a subthreshold slope of 0.92 V/dec. The α-ZTO TFT-based inverter operation was good with acceptable logic level conservation.

Original languageEnglish
Article number5503990
Pages (from-to)836-838
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number8
DOIs
Publication statusPublished - 2010 Aug 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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