Ink-jet-printed zinctinoxide thin-film transistors and circuits with rapid thermal annealing process

Yong Hoon Kim, Kwang Ho Kim, Min Suk Oh, Hyun Jae Kim, Jeong In Han, Min Koo Han, Sung Kyu Park

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50 Citations (Scopus)


We report on high-performance ink-jet-printed amorphous zinctinoxide (α-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed α-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed α-ZTO TFTs (W/L =100μm/10\μm) have shown a carrier mobility of 4.98 cm2Vs with an on/off current ratio that is greater than 109 and a subthreshold slope of 0.92 V/dec. The α-ZTO TFT-based inverter operation was good with acceptable logic level conservation.

Original languageEnglish
Article number5503990
Pages (from-to)836-838
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
Publication statusPublished - 2010 Aug

Bibliographical note

Funding Information:
Manuscript received May 4, 2010; revised May 18, 2010; accepted May 18, 2010. Date of publication July 8, 2010; date of current version July 23, 2010. This work was supported by Grant F0004023-2009-32 from the Information Display R&D Center, one of the 21st Century Frontier R&D Programs funded by the Ministry of Knowledge Economy of the Korean Government. The review of this letter was arranged by Editor J. K. O. Sin.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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