Ink-jet printing of organic semiconductor for fabricating organic thin-film transistors: Film uniformity control by ink composition

Dongjo Kim, Sunho Jeong, Seong Hui Lee, Jooho Moon, Jun Kwang Song

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have investigated the influence of solvent chemistry on ink-jet printed semiconductor patterns. Our research focuses on improving the uniformity of an ink-jet printed single dot semiconductor by adjusting the solvent mixture combination. Use of a solvent mixture with one solvent of a lower boiling point and a higher solubility with respect to the semiconductor molecules and another of a higher boiling point and a lower solubility allows us to produce a uniform single dot pattern by ink-jet printing. It was observed that the film uniformity of the semiconductor layer plays an important role in determining the electrical parameters of the transistor. In comparison with uncontrolled ink composition, the OTFT fabricated from the well-controlled ink exhibited better device performance, including a carrier mobility of 8.5 × 10-3 cm2 V-1 s-1 in the saturation regime, an on/off current ratio of 103, and a threshold voltage of 0.39 V with subthreshold slopes of 0.95 V dec-1.

Original languageEnglish
Pages (from-to)1381-1385
Number of pages5
JournalSynthetic Metals
Volume159
Issue number13
DOIs
Publication statusPublished - 2009 Jul 1

Fingerprint

Ink jet printing
Semiconducting organic compounds
organic semiconductors
inks
Thin film transistors
Ink
printing
transistors
Semiconductor materials
Boiling point
thin films
Chemical analysis
Solubility
boiling
solubility
Carrier mobility
Threshold voltage
Transistors
carrier mobility
threshold voltage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, Dongjo ; Jeong, Sunho ; Lee, Seong Hui ; Moon, Jooho ; Song, Jun Kwang. / Ink-jet printing of organic semiconductor for fabricating organic thin-film transistors : Film uniformity control by ink composition. In: Synthetic Metals. 2009 ; Vol. 159, No. 13. pp. 1381-1385.
@article{3422685d3fe14789b6519298d99f9771,
title = "Ink-jet printing of organic semiconductor for fabricating organic thin-film transistors: Film uniformity control by ink composition",
abstract = "We have investigated the influence of solvent chemistry on ink-jet printed semiconductor patterns. Our research focuses on improving the uniformity of an ink-jet printed single dot semiconductor by adjusting the solvent mixture combination. Use of a solvent mixture with one solvent of a lower boiling point and a higher solubility with respect to the semiconductor molecules and another of a higher boiling point and a lower solubility allows us to produce a uniform single dot pattern by ink-jet printing. It was observed that the film uniformity of the semiconductor layer plays an important role in determining the electrical parameters of the transistor. In comparison with uncontrolled ink composition, the OTFT fabricated from the well-controlled ink exhibited better device performance, including a carrier mobility of 8.5 × 10-3 cm2 V-1 s-1 in the saturation regime, an on/off current ratio of 103, and a threshold voltage of 0.39 V with subthreshold slopes of 0.95 V dec-1.",
author = "Dongjo Kim and Sunho Jeong and Lee, {Seong Hui} and Jooho Moon and Song, {Jun Kwang}",
year = "2009",
month = "7",
day = "1",
doi = "10.1016/j.synthmet.2009.02.025",
language = "English",
volume = "159",
pages = "1381--1385",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier BV",
number = "13",

}

Ink-jet printing of organic semiconductor for fabricating organic thin-film transistors : Film uniformity control by ink composition. / Kim, Dongjo; Jeong, Sunho; Lee, Seong Hui; Moon, Jooho; Song, Jun Kwang.

In: Synthetic Metals, Vol. 159, No. 13, 01.07.2009, p. 1381-1385.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ink-jet printing of organic semiconductor for fabricating organic thin-film transistors

T2 - Film uniformity control by ink composition

AU - Kim, Dongjo

AU - Jeong, Sunho

AU - Lee, Seong Hui

AU - Moon, Jooho

AU - Song, Jun Kwang

PY - 2009/7/1

Y1 - 2009/7/1

N2 - We have investigated the influence of solvent chemistry on ink-jet printed semiconductor patterns. Our research focuses on improving the uniformity of an ink-jet printed single dot semiconductor by adjusting the solvent mixture combination. Use of a solvent mixture with one solvent of a lower boiling point and a higher solubility with respect to the semiconductor molecules and another of a higher boiling point and a lower solubility allows us to produce a uniform single dot pattern by ink-jet printing. It was observed that the film uniformity of the semiconductor layer plays an important role in determining the electrical parameters of the transistor. In comparison with uncontrolled ink composition, the OTFT fabricated from the well-controlled ink exhibited better device performance, including a carrier mobility of 8.5 × 10-3 cm2 V-1 s-1 in the saturation regime, an on/off current ratio of 103, and a threshold voltage of 0.39 V with subthreshold slopes of 0.95 V dec-1.

AB - We have investigated the influence of solvent chemistry on ink-jet printed semiconductor patterns. Our research focuses on improving the uniformity of an ink-jet printed single dot semiconductor by adjusting the solvent mixture combination. Use of a solvent mixture with one solvent of a lower boiling point and a higher solubility with respect to the semiconductor molecules and another of a higher boiling point and a lower solubility allows us to produce a uniform single dot pattern by ink-jet printing. It was observed that the film uniformity of the semiconductor layer plays an important role in determining the electrical parameters of the transistor. In comparison with uncontrolled ink composition, the OTFT fabricated from the well-controlled ink exhibited better device performance, including a carrier mobility of 8.5 × 10-3 cm2 V-1 s-1 in the saturation regime, an on/off current ratio of 103, and a threshold voltage of 0.39 V with subthreshold slopes of 0.95 V dec-1.

UR - http://www.scopus.com/inward/record.url?scp=67449135892&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67449135892&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2009.02.025

DO - 10.1016/j.synthmet.2009.02.025

M3 - Article

AN - SCOPUS:67449135892

VL - 159

SP - 1381

EP - 1385

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 13

ER -