Inkjet-printed InGaZnO thin film transistor

Gun Hee Kim, Hyun Soo Kim, Hyun Soo Shin, Byun Du Ahn, Kyung Ho Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

140 Citations (Scopus)

Abstract

We report inkjet-printed InGaZnO (IGZO) thin film transistors (TFTs). IGZO ink was prepared by dissolving indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate into 2-methoxyethanol with additional stabilizers. The resulting films were inkjet-printed with a resolution of 300 dots per inch using droplets with a diameter of 40 μm, and a volume of 35 pl. The films exhibited high optical transparency in the visible range and had a polycrystalline phase of InGaO3(ZnO)2 after thermal annealing treatment. The chemical composition of this IGZO sample was also determined, and shown to have high stoichiometric characteristics of low oxygen deficiency. The TFTs with a conventional inverted staggered structure using inkjet-printed IGZO as an active channel layer had a field-effect mobility of ~ 0.03 cm2/Vs in saturation region and an on-to-off current ratio greater than ~ 104.

Original languageEnglish
Pages (from-to)4007-4010
Number of pages4
JournalThin Solid Films
Volume517
Issue number14
DOIs
Publication statusPublished - 2009 May 29

Fingerprint

gallium nitrate
Thin film transistors
Hydrates
hydrates
nitrates
Nitrates
transistors
Zinc Acetate
hypoxia
inks
Gallium
thin films
Ink
Transparency
Indium
gallium
indium
acetates
dissolving
chemical composition

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, G. H., Kim, H. S., Shin, H. S., Ahn, B. D., Kim, K. H., & Kim, H. J. (2009). Inkjet-printed InGaZnO thin film transistor. Thin Solid Films, 517(14), 4007-4010. https://doi.org/10.1016/j.tsf.2009.01.151
Kim, Gun Hee ; Kim, Hyun Soo ; Shin, Hyun Soo ; Ahn, Byun Du ; Kim, Kyung Ho ; Kim, Hyun Jae. / Inkjet-printed InGaZnO thin film transistor. In: Thin Solid Films. 2009 ; Vol. 517, No. 14. pp. 4007-4010.
@article{1e56db9c26e340918b3b2e3fc7919dee,
title = "Inkjet-printed InGaZnO thin film transistor",
abstract = "We report inkjet-printed InGaZnO (IGZO) thin film transistors (TFTs). IGZO ink was prepared by dissolving indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate into 2-methoxyethanol with additional stabilizers. The resulting films were inkjet-printed with a resolution of 300 dots per inch using droplets with a diameter of 40 μm, and a volume of 35 pl. The films exhibited high optical transparency in the visible range and had a polycrystalline phase of InGaO3(ZnO)2 after thermal annealing treatment. The chemical composition of this IGZO sample was also determined, and shown to have high stoichiometric characteristics of low oxygen deficiency. The TFTs with a conventional inverted staggered structure using inkjet-printed IGZO as an active channel layer had a field-effect mobility of ~ 0.03 cm2/Vs in saturation region and an on-to-off current ratio greater than ~ 104.",
author = "Kim, {Gun Hee} and Kim, {Hyun Soo} and Shin, {Hyun Soo} and Ahn, {Byun Du} and Kim, {Kyung Ho} and Kim, {Hyun Jae}",
year = "2009",
month = "5",
day = "29",
doi = "10.1016/j.tsf.2009.01.151",
language = "English",
volume = "517",
pages = "4007--4010",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "14",

}

Kim, GH, Kim, HS, Shin, HS, Ahn, BD, Kim, KH & Kim, HJ 2009, 'Inkjet-printed InGaZnO thin film transistor', Thin Solid Films, vol. 517, no. 14, pp. 4007-4010. https://doi.org/10.1016/j.tsf.2009.01.151

Inkjet-printed InGaZnO thin film transistor. / Kim, Gun Hee; Kim, Hyun Soo; Shin, Hyun Soo; Ahn, Byun Du; Kim, Kyung Ho; Kim, Hyun Jae.

In: Thin Solid Films, Vol. 517, No. 14, 29.05.2009, p. 4007-4010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Inkjet-printed InGaZnO thin film transistor

AU - Kim, Gun Hee

AU - Kim, Hyun Soo

AU - Shin, Hyun Soo

AU - Ahn, Byun Du

AU - Kim, Kyung Ho

AU - Kim, Hyun Jae

PY - 2009/5/29

Y1 - 2009/5/29

N2 - We report inkjet-printed InGaZnO (IGZO) thin film transistors (TFTs). IGZO ink was prepared by dissolving indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate into 2-methoxyethanol with additional stabilizers. The resulting films were inkjet-printed with a resolution of 300 dots per inch using droplets with a diameter of 40 μm, and a volume of 35 pl. The films exhibited high optical transparency in the visible range and had a polycrystalline phase of InGaO3(ZnO)2 after thermal annealing treatment. The chemical composition of this IGZO sample was also determined, and shown to have high stoichiometric characteristics of low oxygen deficiency. The TFTs with a conventional inverted staggered structure using inkjet-printed IGZO as an active channel layer had a field-effect mobility of ~ 0.03 cm2/Vs in saturation region and an on-to-off current ratio greater than ~ 104.

AB - We report inkjet-printed InGaZnO (IGZO) thin film transistors (TFTs). IGZO ink was prepared by dissolving indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate into 2-methoxyethanol with additional stabilizers. The resulting films were inkjet-printed with a resolution of 300 dots per inch using droplets with a diameter of 40 μm, and a volume of 35 pl. The films exhibited high optical transparency in the visible range and had a polycrystalline phase of InGaO3(ZnO)2 after thermal annealing treatment. The chemical composition of this IGZO sample was also determined, and shown to have high stoichiometric characteristics of low oxygen deficiency. The TFTs with a conventional inverted staggered structure using inkjet-printed IGZO as an active channel layer had a field-effect mobility of ~ 0.03 cm2/Vs in saturation region and an on-to-off current ratio greater than ~ 104.

UR - http://www.scopus.com/inward/record.url?scp=65149090679&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65149090679&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.01.151

DO - 10.1016/j.tsf.2009.01.151

M3 - Article

AN - SCOPUS:65149090679

VL - 517

SP - 4007

EP - 4010

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 14

ER -

Kim GH, Kim HS, Shin HS, Ahn BD, Kim KH, Kim HJ. Inkjet-printed InGaZnO thin film transistor. Thin Solid Films. 2009 May 29;517(14):4007-4010. https://doi.org/10.1016/j.tsf.2009.01.151