Inkjet printing of metal oxide thin-film transistors

Jooho Moon, Keunkyu Song

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

Metal oxide semiconductors have attracted considerable attention because of their superior material properties, including their band gap, transparency, and high field-effect mobility compared to conventional a-Si:H and organic semiconductors in applications requiring transparent thin-film transistors (TFTs). This chapter discusses several fundamental issues associated with the inkjet printing of metal oxide TFTs. The fundamental challenges in depositing oxide thin films from a solution are associated with the conversion of the soluble precursors into a dense solid. The printed transistor performance is highly dependent on both the film morphology and the quality of the semiconductor-electrode and/or semiconductor-dielectric interfaces. In the future, inkjet printing of all-metal oxides can open up a new possibility to realize transparent, flexible-solution-processed oxide devices. Controlled Vocabulary Terms: ink jet printing; semiconductors; thin film transistors

Original languageEnglish
Title of host publicationInkjet-based Micromanufacturing
PublisherWiley-VCH Verlag
Pages237-255
Number of pages19
ISBN (Electronic)9783527647101
ISBN (Print)9783527319046
DOIs
Publication statusPublished - 2012 May 23

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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