An inorganic nano light-emitting transistor (INLET) consisting of p-type porous Si nanowires (PoSiNWs) and an n-type ZnO nanofilm was integrated on a heavily doped p-type Si substrate with a thermally grown SiO2layer. To verify that modulation of the Fermi level of the PoSiNWs is key for switchable light emitting, I–V and electroluminescent characteristics of the INLET are investigated as a function of gate bias (V g). As the V gis changed from 0 V to −20 V, the current level and light-emission intensity in the orange–red range increase by three and two times, respectively, with a forward bias of 20 V in the p–n junction, compared to those at a V gof 0 V. On the other hand, as the V gapproaches 10 V, the current level decreases and the emission intensity is reduced and then finally switched off. This result arises from the modulation of the Fermi level of the PoSiNWs and the built-in potential at the p–n junction by the applied gate electric field.
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© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
All Science Journal Classification (ASJC) codes
- Materials Science(all)