Insertion of an organic interlayer for hole current enhancement in inverted organic light emitting devices

Soon Mi Park, Yoon Hak Kim, Yeonjin Yi, Hyoung Yun Oh, Jeong Won Kim

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

We report the enhancement of hole current density in the hole transport part of an inverted top-emission organic light emitted diode by applying an organic insertion layer of 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN). Poor hole transporting performance of Al/4, 4′ -bis(N -phenyl-1-naphthylamino)biphenyl (NPB)/indium tin oxide is greatly improved by the HAT-CN insertion between Al and NPB layer. The highest occupied molecular orbital level onset of the NPB bends toward Fermi level at the HAT-CN/NPB interface. This extra charge generation layer made of pure organic molecules substantially enhances hole injection from Al anode as revealed by the results of ultraviolet photoelectron spectroscopy and J-V measurement data.

Original languageEnglish
Article number063308
JournalApplied Physics Letters
Volume97
Issue number6
DOIs
Publication statusPublished - 2010 Aug 9

Fingerprint

insertion
interlayers
augmentation
ultraviolet spectroscopy
indium oxides
tin oxides
molecular orbitals
anodes
diodes
photoelectron spectroscopy
injection
current density
molecules

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Park, Soon Mi ; Kim, Yoon Hak ; Yi, Yeonjin ; Oh, Hyoung Yun ; Won Kim, Jeong. / Insertion of an organic interlayer for hole current enhancement in inverted organic light emitting devices. In: Applied Physics Letters. 2010 ; Vol. 97, No. 6.
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Insertion of an organic interlayer for hole current enhancement in inverted organic light emitting devices. / Park, Soon Mi; Kim, Yoon Hak; Yi, Yeonjin; Oh, Hyoung Yun; Won Kim, Jeong.

In: Applied Physics Letters, Vol. 97, No. 6, 063308, 09.08.2010.

Research output: Contribution to journalArticle

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