A Schottky-type diode switch consisting of a Pt (In,Sn)2 O3 Ti O2 Pt stack was fabricated for applications to cross-bar type resistive-switching memory arrays. The high (0.55 eV) and low potential barrier at the Ti O2 Pt and Ti O2 (In,Sn)2 O3 junctions, respectively, constitute the rectifying properties of the stacked structure. The forward/reverse current ratio was as high as ∼1.6× 104 at an applied voltage of ∼1 V. When PtTi O2 Pt memory was connected to this diode in series, there was an insignificant interference on the memory function from the diode under the forward bias and virtually no resistive switching under a reverse bias.
|Journal||Applied Physics Letters|
|Publication status||Published - 2008|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)