(In,Sn)2 O3 Ti O2 Pt Schottky-type diode switch for the Ti O2 resistive switching memory array

Yong Cheol Shin; Jaewon Song; Kyung Min Kim; Byung Joon Choi; Seol Choi; Hyun Ju Lee; Gun Hwan Kim; Taeyong Eom; Cheol Seong Hwang

doi:10.1063/1.2912531

(In,Sn)2 O3 Ti O2 Pt Schottky-type diode switch for the Ti O2 resistive switching memory array

Yong Cheol Shin, Jaewon Song, Kyung Min Kim, Byung Joon Choi, Seol Choi, Hyun Ju Lee, Gun Hwan Kim, Taeyong Eom, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A Schottky-type diode switch consisting of a Pt (In,Sn)2 O3 Ti O2 Pt stack was fabricated for applications to cross-bar type resistive-switching memory arrays. The high (0.55 eV) and low potential barrier at the Ti O2 Pt and Ti O2 (In,Sn)2 O3 junctions, respectively, constitute the rectifying properties of the stacked structure. The forward/reverse current ratio was as high as ∼1.6× 104 at an applied voltage of ∼1 V. When PtTi O2 Pt memory was connected to this diode in series, there was an insignificant interference on the memory function from the diode under the forward bias and virtually no resistive switching under a reverse bias.

Original language	English
Article number	162904
Journal	Applied Physics Letters
Volume	92
Issue number	16
DOIs	https://doi.org/10.1063/1.2912531
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2912531

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title = "(In,Sn)2 O3 Ti O2 Pt Schottky-type diode switch for the Ti O2 resistive switching memory array",

abstract = "A Schottky-type diode switch consisting of a Pt (In,Sn)2 O3 Ti O2 Pt stack was fabricated for applications to cross-bar type resistive-switching memory arrays. The high (0.55 eV) and low potential barrier at the Ti O2 Pt and Ti O2 (In,Sn)2 O3 junctions, respectively, constitute the rectifying properties of the stacked structure. The forward/reverse current ratio was as high as ∼1.6× 104 at an applied voltage of ∼1 V. When PtTi O2 Pt memory was connected to this diode in series, there was an insignificant interference on the memory function from the diode under the forward bias and virtually no resistive switching under a reverse bias.",

author = "Shin, {Yong Cheol} and Jaewon Song and Kim, {Kyung Min} and Choi, {Byung Joon} and Seol Choi and Lee, {Hyun Ju} and Kim, {Gun Hwan} and Taeyong Eom and Hwang, {Cheol Seong}",

year = "2008",

doi = "10.1063/1.2912531",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - (In,Sn)2 O3 Ti O2 Pt Schottky-type diode switch for the Ti O2 resistive switching memory array

AU - Shin, Yong Cheol

AU - Song, Jaewon

AU - Kim, Kyung Min

AU - Choi, Byung Joon

AU - Choi, Seol

AU - Lee, Hyun Ju

AU - Kim, Gun Hwan

AU - Eom, Taeyong

AU - Hwang, Cheol Seong

PY - 2008

Y1 - 2008

N2 - A Schottky-type diode switch consisting of a Pt (In,Sn)2 O3 Ti O2 Pt stack was fabricated for applications to cross-bar type resistive-switching memory arrays. The high (0.55 eV) and low potential barrier at the Ti O2 Pt and Ti O2 (In,Sn)2 O3 junctions, respectively, constitute the rectifying properties of the stacked structure. The forward/reverse current ratio was as high as ∼1.6× 104 at an applied voltage of ∼1 V. When PtTi O2 Pt memory was connected to this diode in series, there was an insignificant interference on the memory function from the diode under the forward bias and virtually no resistive switching under a reverse bias.

AB - A Schottky-type diode switch consisting of a Pt (In,Sn)2 O3 Ti O2 Pt stack was fabricated for applications to cross-bar type resistive-switching memory arrays. The high (0.55 eV) and low potential barrier at the Ti O2 Pt and Ti O2 (In,Sn)2 O3 junctions, respectively, constitute the rectifying properties of the stacked structure. The forward/reverse current ratio was as high as ∼1.6× 104 at an applied voltage of ∼1 V. When PtTi O2 Pt memory was connected to this diode in series, there was an insignificant interference on the memory function from the diode under the forward bias and virtually no resistive switching under a reverse bias.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162904

ER -

(In,Sn)2 O3 Ti O2 Pt Schottky-type diode switch for the Ti O2 resistive switching memory array

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