Instability assessment and modeling of amorphous InGaZnO thin film transistors under alternating pulse bias stresses

S. Park, E. N. Cho, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Amorphous InGaZnO (a-IGZO) TFTs have attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating DC bias stress tests are required to ensure stable TFT characteristics. Moreover, the analysis about scaling-down behavior under bias stress condition is required. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (δVth) of a-IGZO TFTs with respect to the stress time duration (td) are analyzed by the variation of interface trap charges (Qit) and the channel electric field (E-field). In addition, the channel lengthdependent tendency is verified using the concepts of the subgap density of states (DOS) and density of total trap states (NT).

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2013, CSTIC 2013
Pages991-1001
Number of pages11
Volume52
Edition1
DOIs
Publication statusPublished - 2013 Apr 12
EventChina Semiconductor Technology International Conference 2013, CSTIC 2013 - Shanghai, China
Duration: 2013 Mar 192013 Mar 21

Other

OtherChina Semiconductor Technology International Conference 2013, CSTIC 2013
CountryChina
CityShanghai
Period13/3/1913/3/21

Fingerprint

Amorphous films
Thin film transistors
Threshold voltage
Transparency
Electric fields

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Park, S., Cho, E. N., & Yun, I. (2013). Instability assessment and modeling of amorphous InGaZnO thin film transistors under alternating pulse bias stresses. In China Semiconductor Technology International Conference 2013, CSTIC 2013 (1 ed., Vol. 52, pp. 991-1001) https://doi.org/10.1149/05201.0991ecst
Park, S. ; Cho, E. N. ; Yun, Ilgu. / Instability assessment and modeling of amorphous InGaZnO thin film transistors under alternating pulse bias stresses. China Semiconductor Technology International Conference 2013, CSTIC 2013. Vol. 52 1. ed. 2013. pp. 991-1001
@inproceedings{a888b39e07294b989151f4bec6b5a9be,
title = "Instability assessment and modeling of amorphous InGaZnO thin film transistors under alternating pulse bias stresses",
abstract = "Amorphous InGaZnO (a-IGZO) TFTs have attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating DC bias stress tests are required to ensure stable TFT characteristics. Moreover, the analysis about scaling-down behavior under bias stress condition is required. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (δVth) of a-IGZO TFTs with respect to the stress time duration (td) are analyzed by the variation of interface trap charges (Qit) and the channel electric field (E-field). In addition, the channel lengthdependent tendency is verified using the concepts of the subgap density of states (DOS) and density of total trap states (NT).",
author = "S. Park and Cho, {E. N.} and Ilgu Yun",
year = "2013",
month = "4",
day = "12",
doi = "10.1149/05201.0991ecst",
language = "English",
isbn = "9781607683810",
volume = "52",
pages = "991--1001",
booktitle = "China Semiconductor Technology International Conference 2013, CSTIC 2013",
edition = "1",

}

Park, S, Cho, EN & Yun, I 2013, Instability assessment and modeling of amorphous InGaZnO thin film transistors under alternating pulse bias stresses. in China Semiconductor Technology International Conference 2013, CSTIC 2013. 1 edn, vol. 52, pp. 991-1001, China Semiconductor Technology International Conference 2013, CSTIC 2013, Shanghai, China, 13/3/19. https://doi.org/10.1149/05201.0991ecst

Instability assessment and modeling of amorphous InGaZnO thin film transistors under alternating pulse bias stresses. / Park, S.; Cho, E. N.; Yun, Ilgu.

China Semiconductor Technology International Conference 2013, CSTIC 2013. Vol. 52 1. ed. 2013. p. 991-1001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Instability assessment and modeling of amorphous InGaZnO thin film transistors under alternating pulse bias stresses

AU - Park, S.

AU - Cho, E. N.

AU - Yun, Ilgu

PY - 2013/4/12

Y1 - 2013/4/12

N2 - Amorphous InGaZnO (a-IGZO) TFTs have attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating DC bias stress tests are required to ensure stable TFT characteristics. Moreover, the analysis about scaling-down behavior under bias stress condition is required. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (δVth) of a-IGZO TFTs with respect to the stress time duration (td) are analyzed by the variation of interface trap charges (Qit) and the channel electric field (E-field). In addition, the channel lengthdependent tendency is verified using the concepts of the subgap density of states (DOS) and density of total trap states (NT).

AB - Amorphous InGaZnO (a-IGZO) TFTs have attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating DC bias stress tests are required to ensure stable TFT characteristics. Moreover, the analysis about scaling-down behavior under bias stress condition is required. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (δVth) of a-IGZO TFTs with respect to the stress time duration (td) are analyzed by the variation of interface trap charges (Qit) and the channel electric field (E-field). In addition, the channel lengthdependent tendency is verified using the concepts of the subgap density of states (DOS) and density of total trap states (NT).

UR - http://www.scopus.com/inward/record.url?scp=84875949531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875949531&partnerID=8YFLogxK

U2 - 10.1149/05201.0991ecst

DO - 10.1149/05201.0991ecst

M3 - Conference contribution

SN - 9781607683810

VL - 52

SP - 991

EP - 1001

BT - China Semiconductor Technology International Conference 2013, CSTIC 2013

ER -

Park S, Cho EN, Yun I. Instability assessment and modeling of amorphous InGaZnO thin film transistors under alternating pulse bias stresses. In China Semiconductor Technology International Conference 2013, CSTIC 2013. 1 ed. Vol. 52. 2013. p. 991-1001 https://doi.org/10.1149/05201.0991ecst