Instability assessment and modeling of amorphous InGaZnO thin film transistors under alternating pulse bias stresses

S. Park, E. N. Cho, I. Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Amorphous InGaZnO (a-IGZO) TFTs have attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating DC bias stress tests are required to ensure stable TFT characteristics. Moreover, the analysis about scaling-down behavior under bias stress condition is required. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (δVth) of a-IGZO TFTs with respect to the stress time duration (td) are analyzed by the variation of interface trap charges (Qit) and the channel electric field (E-field). In addition, the channel lengthdependent tendency is verified using the concepts of the subgap density of states (DOS) and density of total trap states (NT).

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2013, CSTIC 2013
Pages991-1001
Number of pages11
Edition1
DOIs
Publication statusPublished - 2013 Apr 12
EventChina Semiconductor Technology International Conference 2013, CSTIC 2013 - Shanghai, China
Duration: 2013 Mar 192013 Mar 21

Publication series

NameECS Transactions
Number1
Volume52
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherChina Semiconductor Technology International Conference 2013, CSTIC 2013
CountryChina
CityShanghai
Period13/3/1913/3/21

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Park, S., Cho, E. N., & Yun, I. (2013). Instability assessment and modeling of amorphous InGaZnO thin film transistors under alternating pulse bias stresses. In China Semiconductor Technology International Conference 2013, CSTIC 2013 (1 ed., pp. 991-1001). (ECS Transactions; Vol. 52, No. 1). https://doi.org/10.1149/05201.0991ecst