Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7 Ge0.3 layers

K. B. Chung, G. Lucovsky, W. J. Lee, M. H. Cho, Hyeongtag Jeon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The interfacial characteristics and thermal stability of nitrided HfO 2 films grown on strained Si0.7 Ge0.3 layers were investigated by medium energy ion scattering, high-resolution x-ray photoelectron spectroscopy, and near-edge x-ray absorption fine structure. N incorporation of HfO2 films grown on Si0.7 Ge 0.3 layers was strongly related to the diffusion of Si and Ge from strained Si0.7 Ge0.3 layers in the interfacial region between HfO2 films and Si0.7 Ge0.3 layers by the annealing treatment in NH3 ambient. The chemical states of SiOxNy and GeOx Ny were formed in the interfacial region by N incorporation, and SiOx Ny was dominant chemical states rather than that of GeOx Ny. However, the incorporated N was not stable, which was mostly diffused out during the postnitridation annealing in a N2 ambient. The instability of incorporated N through the additional annealing treatment extensively caused the change in the structure of HfO2.

Original languageEnglish
Article number042907
JournalApplied Physics Letters
Volume94
Issue number4
DOIs
Publication statusPublished - 2009 Feb 9

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nitrogen
annealing
ion scattering
x ray absorption
x ray spectroscopy
thermal stability
fine structure
photoelectron spectroscopy
high resolution
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chung, K. B. ; Lucovsky, G. ; Lee, W. J. ; Cho, M. H. ; Jeon, Hyeongtag. / Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7 Ge0.3 layers. In: Applied Physics Letters. 2009 ; Vol. 94, No. 4.
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abstract = "The interfacial characteristics and thermal stability of nitrided HfO 2 films grown on strained Si0.7 Ge0.3 layers were investigated by medium energy ion scattering, high-resolution x-ray photoelectron spectroscopy, and near-edge x-ray absorption fine structure. N incorporation of HfO2 films grown on Si0.7 Ge 0.3 layers was strongly related to the diffusion of Si and Ge from strained Si0.7 Ge0.3 layers in the interfacial region between HfO2 films and Si0.7 Ge0.3 layers by the annealing treatment in NH3 ambient. The chemical states of SiOxNy and GeOx Ny were formed in the interfacial region by N incorporation, and SiOx Ny was dominant chemical states rather than that of GeOx Ny. However, the incorporated N was not stable, which was mostly diffused out during the postnitridation annealing in a N2 ambient. The instability of incorporated N through the additional annealing treatment extensively caused the change in the structure of HfO2.",
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Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7 Ge0.3 layers. / Chung, K. B.; Lucovsky, G.; Lee, W. J.; Cho, M. H.; Jeon, Hyeongtag.

In: Applied Physics Letters, Vol. 94, No. 4, 042907, 09.02.2009.

Research output: Contribution to journalArticle

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AB - The interfacial characteristics and thermal stability of nitrided HfO 2 films grown on strained Si0.7 Ge0.3 layers were investigated by medium energy ion scattering, high-resolution x-ray photoelectron spectroscopy, and near-edge x-ray absorption fine structure. N incorporation of HfO2 films grown on Si0.7 Ge 0.3 layers was strongly related to the diffusion of Si and Ge from strained Si0.7 Ge0.3 layers in the interfacial region between HfO2 films and Si0.7 Ge0.3 layers by the annealing treatment in NH3 ambient. The chemical states of SiOxNy and GeOx Ny were formed in the interfacial region by N incorporation, and SiOx Ny was dominant chemical states rather than that of GeOx Ny. However, the incorporated N was not stable, which was mostly diffused out during the postnitridation annealing in a N2 ambient. The instability of incorporated N through the additional annealing treatment extensively caused the change in the structure of HfO2.

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