Amorphous In-Ga-Zn-O thin-film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength-varied light illumination tests are required to ensure stable TFT characteristics. In this paper, the effects of different light wavelengths under both positive and negative V GS stresses on amorphous In-Ga-Zn-O TFTs are investigated. The TFT instability that is dependent on optical and electrical stresses can be explained by the charge trapping mechanism and interface modification.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering