Instability of light illumination stress on amorphous In-Ga-Zn-O thin-film transistors

Suehye Park, Edward Namkyu Cho, Ilgu Yun

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Amorphous In-Ga-Zn-O thin-film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength-varied light illumination tests are required to ensure stable TFT characteristics. In this paper, the effects of different light wavelengths under both positive and negative V GS stresses on amorphous In-Ga-Zn-O TFTs are investigated. The TFT instability that is dependent on optical and electrical stresses can be explained by the charge trapping mechanism and interface modification.

Original languageEnglish
Pages (from-to)333-338
Number of pages6
JournalJournal of the Society for Information Display
Volume21
Issue number8
DOIs
Publication statusPublished - 2013 Aug 1

Fingerprint

Thin film transistors
transistors
Lighting
illumination
thin films
Wavelength
Wave filters
Charge trapping
wavelengths
trapping
Color
color
filters

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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Instability of light illumination stress on amorphous In-Ga-Zn-O thin-film transistors. / Park, Suehye; Cho, Edward Namkyu; Yun, Ilgu.

In: Journal of the Society for Information Display, Vol. 21, No. 8, 01.08.2013, p. 333-338.

Research output: Contribution to journalArticle

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