Instability of light illumination stress on amorphous InGaZnO thin film transistors

Suehye Park, Edward Namkyu Cho, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, the effects of the different wavelengths of light under both positive and negative VGS stresses on amorphous InGaZnO thin film transistors are investigated. The TFT instability depending on optical and electrical stresses can be explained by the charge trapping mechanism and the interface modification.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages317-320
Number of pages4
Publication statusPublished - 2012 Dec 1
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 2012 Dec 42012 Dec 7

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
CountryJapan
CityKyoto
Period12/12/412/12/7

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All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Park, S., Cho, E. N., & Yun, I. (2012). Instability of light illumination stress on amorphous InGaZnO thin film transistors. In Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012 (pp. 317-320). (Proceedings of the International Display Workshops; Vol. 1).