Instability of oxide thin film transistor under electrical–mechanical hybrid stress for foldable display

Dongseok Shin, Min Soo Bae, Ilgu Yun

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Degradation mechanism of foldable thin film transistors (TFTs) is investigated experimentally by electrical, mechanical and electrical–mechanical hybrid stress experiments. Mechanical and electrical stress environment was set for foldable TFTs and the degradation effect according to the applied stress is investigated and analyzed. Degradation mechanism model that can explain the defect generation is suggested to explain the result of electrical–mechanical hybrid stress experiment.

Original languageEnglish
Pages (from-to)109-112
Number of pages4
JournalMicroelectronics Reliability
Volume64
DOIs
Publication statusPublished - 2016 Sep 1

Fingerprint

Thin film transistors
Oxide films
transistors
Display devices
oxides
degradation
thin films
Degradation
Experiments
Defects
defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "Degradation mechanism of foldable thin film transistors (TFTs) is investigated experimentally by electrical, mechanical and electrical–mechanical hybrid stress experiments. Mechanical and electrical stress environment was set for foldable TFTs and the degradation effect according to the applied stress is investigated and analyzed. Degradation mechanism model that can explain the defect generation is suggested to explain the result of electrical–mechanical hybrid stress experiment.",
author = "Dongseok Shin and Bae, {Min Soo} and Ilgu Yun",
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Instability of oxide thin film transistor under electrical–mechanical hybrid stress for foldable display. / Shin, Dongseok; Bae, Min Soo; Yun, Ilgu.

In: Microelectronics Reliability, Vol. 64, 01.09.2016, p. 109-112.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Instability of oxide thin film transistor under electrical–mechanical hybrid stress for foldable display

AU - Shin, Dongseok

AU - Bae, Min Soo

AU - Yun, Ilgu

PY - 2016/9/1

Y1 - 2016/9/1

N2 - Degradation mechanism of foldable thin film transistors (TFTs) is investigated experimentally by electrical, mechanical and electrical–mechanical hybrid stress experiments. Mechanical and electrical stress environment was set for foldable TFTs and the degradation effect according to the applied stress is investigated and analyzed. Degradation mechanism model that can explain the defect generation is suggested to explain the result of electrical–mechanical hybrid stress experiment.

AB - Degradation mechanism of foldable thin film transistors (TFTs) is investigated experimentally by electrical, mechanical and electrical–mechanical hybrid stress experiments. Mechanical and electrical stress environment was set for foldable TFTs and the degradation effect according to the applied stress is investigated and analyzed. Degradation mechanism model that can explain the defect generation is suggested to explain the result of electrical–mechanical hybrid stress experiment.

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JF - Microelectronics Reliability

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