Instant glue passivation layer of indium-gallium-zinc oxide thin film transistors

Hyukjoon Yoo, Young Jun Tak, Byung Ha Kang, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We suggest instant glue for passivation layer of indium-gallium-zinc oxide (IGZO) thin film transistors (TFTs). The instant glue is liquid in room temperature, thus we could easily drop the glue on the IGZO channel layer. As a result, the IGZO TFTs with glue passivation layer (GPL) showed improved electrical characteristics such as field effect mobility of 12.11 cm2/Vs, on/off ratio of 8.72 x 107, and subthreshold swing of 0.39 V/dec. Furthermore, stability test under positive bias temperature stress of IGZO TFTs with GPL showed low threshold voltage shift at 1.0 V. These results indicate that GPL can play significant role for both improving electrical characteristics and enhancing stability by blocking the oxygen and moisture in atmosphere efficiently.

Original languageEnglish
Title of host publicationAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages306-308
Number of pages3
ISBN (Electronic)9784990875336
Publication statusPublished - 2017 Aug 8
Event24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan
Duration: 2017 Jul 42017 Jul 7

Publication series

NameAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Other

Other24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
CountryJapan
CityKyoto
Period17/7/417/7/7

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computational Theory and Mathematics

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