Integrated phase-change memory devices using Bi2Te3 nanowires

Nalae Han, Sung In Kim, Jeong Do Yang, Kyumin Lee, Hyunchul Sohn, Hye Mi So, Chi Won Ahn, Kyung Hwa Yoo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Bismuth telluride (Bi2Te3) and its alloys are considered to be the best avaiable materials for near room-temperature thermoelectric applications. Moreover, because low-dimensional thermoelectric materials are expected to have a higher figure of merit due to quantum confinement effects, Bi2Te3 nanowires have been studied extensively. However, their memory switching behavior has never been studied in Bi2Te3 nanowires. Here, we report for the first time on reversible memory switching effects in Bi2Te3 nanowires fabricated using anodized aluminum oxide (AAO) membranes. We find that Bi 2Te3 nanowires show a reversible crystalline-amorphous phase change induced by temperature or electric field, similar to that reported for chalcogenide materials (Ge-Sb-Te alloys, GST), and we demonstrate that Bi2Te3 nanowires show considerable promise as building blocks for phase change random access memory (PRAM).

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages126-128
Number of pages3
Publication statusPublished - 2011 Nov 23
EventNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States
Duration: 2011 Jun 132011 Jun 16

Publication series

NameTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Volume2

Other

OtherNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
CountryUnited States
CityBoston, MA
Period11/6/1311/6/16

Fingerprint

Phase change memory
Nanowires
Data storage equipment
Quantum confinement
Bismuth
Temperature distribution
Electric fields
Crystalline materials
Membranes
Aluminum
Oxides

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Han, N., Kim, S. I., Yang, J. D., Lee, K., Sohn, H., So, H. M., ... Yoo, K. H. (2011). Integrated phase-change memory devices using Bi2Te3 nanowires. In Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 (pp. 126-128). (Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011; Vol. 2).
Han, Nalae ; Kim, Sung In ; Yang, Jeong Do ; Lee, Kyumin ; Sohn, Hyunchul ; So, Hye Mi ; Ahn, Chi Won ; Yoo, Kyung Hwa. / Integrated phase-change memory devices using Bi2Te3 nanowires. Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. 2011. pp. 126-128 (Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011).
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abstract = "Bismuth telluride (Bi2Te3) and its alloys are considered to be the best avaiable materials for near room-temperature thermoelectric applications. Moreover, because low-dimensional thermoelectric materials are expected to have a higher figure of merit due to quantum confinement effects, Bi2Te3 nanowires have been studied extensively. However, their memory switching behavior has never been studied in Bi2Te3 nanowires. Here, we report for the first time on reversible memory switching effects in Bi2Te3 nanowires fabricated using anodized aluminum oxide (AAO) membranes. We find that Bi 2Te3 nanowires show a reversible crystalline-amorphous phase change induced by temperature or electric field, similar to that reported for chalcogenide materials (Ge-Sb-Te alloys, GST), and we demonstrate that Bi2Te3 nanowires show considerable promise as building blocks for phase change random access memory (PRAM).",
author = "Nalae Han and Kim, {Sung In} and Yang, {Jeong Do} and Kyumin Lee and Hyunchul Sohn and So, {Hye Mi} and Ahn, {Chi Won} and Yoo, {Kyung Hwa}",
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Han, N, Kim, SI, Yang, JD, Lee, K, Sohn, H, So, HM, Ahn, CW & Yoo, KH 2011, Integrated phase-change memory devices using Bi2Te3 nanowires. in Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011, vol. 2, pp. 126-128, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011, Boston, MA, United States, 11/6/13.

Integrated phase-change memory devices using Bi2Te3 nanowires. / Han, Nalae; Kim, Sung In; Yang, Jeong Do; Lee, Kyumin; Sohn, Hyunchul; So, Hye Mi; Ahn, Chi Won; Yoo, Kyung Hwa.

Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. 2011. p. 126-128 (Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011; Vol. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Han N, Kim SI, Yang JD, Lee K, Sohn H, So HM et al. Integrated phase-change memory devices using Bi2Te3 nanowires. In Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. 2011. p. 126-128. (Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011).