Integration of high dielectric (Ba1-xSrx)TiO3 thin films into new barrier layer electrode structures

Jae Chang Lee, Eun Suck Choi, Soon Gil Yoon, Dong Soo Yoon, Hong Koo Baik

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

(Ba1-xSrx)TiO3 (BST) films were deposited on the new electrode structures of Pt/RuO2 + Ta/TiSi2/poly-Si/SiO2/Si (PRTS) and Pt/RuO2 + Ta/poly-Si/SiO2/Si (PRS) by metallorganic chemical vapor deposition. The films deposited on PRTS show smoother morphologies than those on PRS. Titanium-silicide (TiSi2) buffer layers formed on poly-Si play an important role in decreasing the roughness of each layer as well as contact resistance between RuO2 + Ta and poly-Si. The electrode structures showed a stable morphology after deposition of BST films and annealing at 750°C. The 80 nm thick BST films deposited on PRTS showed a dielectric constant of 240 and dissipation factor of 0.01 at 100 kHz. The BST films deposited on PRTS have a leakage current density of about 4.0 × 10-7 A/cm2 at 190 kV/cm and breakdown strength of 290 kV/cm.

Original languageEnglish
Pages (from-to)3101-3104
Number of pages4
JournalJournal of the Electrochemical Society
Volume146
Issue number8
DOIs
Publication statusPublished - 1999 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Integration of high dielectric (Ba<sub>1-x</sub>Sr<sub>x</sub>)TiO<sub>3</sub> thin films into new barrier layer electrode structures'. Together they form a unique fingerprint.

Cite this