Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

Han Sol Back, Min Je Kim, Jeong Ju Baek, Do Hwan Kim, Gyojic Shin, Kyung Ho Choi, Jeong Ho Cho

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO 2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters. The conversion process of PHPS to SiO 2 was optimized by varying the number of intense pulses and applied voltage. The chemical structure and gate dielectric properties of the PHPS-derived SiO 2 films were systematically investigated via Fourier transform infrared spectroscopy and leakage current measurements, respectively. The resulting PHPS-derived SiO 2 gate dielectric layer showed a dielectric constant of 3.8 at 1 MHz and a leakage current density of 9.7 × 10 -12 A cm -2 at 4.0 MV cm -1 . The PHPS-derived SiO 2 film was utilized as a gate dielectric for fabricating benchmark p- and n-channel OFETs based on pentacene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C 8 ), respectively. The resulting OFETs exhibited good electrical properties, such as carrier mobilities of 0.16 (±0.01) cm 2 V -1 s -1 (for the pentacene OFET) and 0.02 (±0.01) cm 2 V -1 s -1 (for the PTCDI-C 8 OFET) and an on-off current ratio larger than 10 5 . The fabrication of the PHPS-derived SiO 2 gate dielectric layer by a simple solution process and intense pulsed UV irradiation at room temperature serves as a novel approach for the realization of large-area flexible electronics in the flexible device industry of the future.

Original languageEnglish
Pages (from-to)3169-3175
Number of pages7
JournalRSC Advances
Volume9
Issue number6
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Gates (transistor)
Organic field effect transistors
Logic gates
Gate dielectrics
Leakage currents
Irradiation
Flexible electronics
Carrier mobility
Electric current measurement
Dielectric properties
Fourier transform infrared spectroscopy
Electric properties
Permittivity
Current density
perhydropolysilazane
Fabrication
Electric potential
Industry

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Back, Han Sol ; Kim, Min Je ; Baek, Jeong Ju ; Kim, Do Hwan ; Shin, Gyojic ; Choi, Kyung Ho ; Cho, Jeong Ho. / Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates. In: RSC Advances. 2019 ; Vol. 9, No. 6. pp. 3169-3175.
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Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates. / Back, Han Sol; Kim, Min Je; Baek, Jeong Ju; Kim, Do Hwan; Shin, Gyojic; Choi, Kyung Ho; Cho, Jeong Ho.

In: RSC Advances, Vol. 9, No. 6, 01.01.2019, p. 3169-3175.

Research output: Contribution to journalArticle

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T1 - Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

AU - Back, Han Sol

AU - Kim, Min Je

AU - Baek, Jeong Ju

AU - Kim, Do Hwan

AU - Shin, Gyojic

AU - Choi, Kyung Ho

AU - Cho, Jeong Ho

PY - 2019/1/1

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N2 - We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO 2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters. The conversion process of PHPS to SiO 2 was optimized by varying the number of intense pulses and applied voltage. The chemical structure and gate dielectric properties of the PHPS-derived SiO 2 films were systematically investigated via Fourier transform infrared spectroscopy and leakage current measurements, respectively. The resulting PHPS-derived SiO 2 gate dielectric layer showed a dielectric constant of 3.8 at 1 MHz and a leakage current density of 9.7 × 10 -12 A cm -2 at 4.0 MV cm -1 . The PHPS-derived SiO 2 film was utilized as a gate dielectric for fabricating benchmark p- and n-channel OFETs based on pentacene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C 8 ), respectively. The resulting OFETs exhibited good electrical properties, such as carrier mobilities of 0.16 (±0.01) cm 2 V -1 s -1 (for the pentacene OFET) and 0.02 (±0.01) cm 2 V -1 s -1 (for the PTCDI-C 8 OFET) and an on-off current ratio larger than 10 5 . The fabrication of the PHPS-derived SiO 2 gate dielectric layer by a simple solution process and intense pulsed UV irradiation at room temperature serves as a novel approach for the realization of large-area flexible electronics in the flexible device industry of the future.

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