Intensity dependent absorption bleaching of high subband excitons in GaAs/AlGaAs multiple quantum wells

Sanghun Shin, Kyumin Chae, Seung Han Park, Ung Kim, Gyungock Kim, El Hang Lee

Research output: Contribution to journalArticle

Abstract

We have investigated the influence of carrier generation on the absorption bleaching of the n = 2 and n = 3 excitons in GaAs/AlGaAs multiple quantum wells (MQWs). With the excitation near the resonance of the n = 1 exciton absorption, the long range coulomb screening and collision broadening had significant effects on the exciton bleaching. At low excitation intensity, the absorption bleaching of the n = 2 exciton in 75 A-thick MQWs and that of the n = 3 exciton in 150 A-thick MQWs were due to linewidth broadening by the collision broadening effect only. At high excitation intensity, however, the reduction of oscillator strength due to the long range coulomb screening contributed dominantly to absorption bleaching.

Original languageEnglish
Pages (from-to)S273-S277
JournalJournal of the Korean Physical Society
Volume33
Issue numberSUPPL. 2
Publication statusPublished - 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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