Inter-layer subband mixing in MBE-grown HgTe/CdTe superlattices

J. W. Park, Jaesun Lee, Y. M. Moon, J. B. Choi, M. S. Hahn, B. K. Song, Y. B. Hou, T. W. Kang, Kyung-hwa Yoo, C. A. Hoffman, J. R. Meyer, Y. T. Jeoung, H. K. Kim, J. M. Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report transport results for molecular beam epitaxially grown HgTe/CdTe superlattices (SLs) with CdTe barrier thickness of L b systematically varied from 100Å down to 20Å, and demonstrate the increasing intersubband mixing between adjacent layers with decreasing L b . Magnetotransport data measured at 1.5K and for B up to 10T show monotonously varying features with L b , implying a dimensional change from 2D to quasi-3D. As L b decreases, the quantum Hall plateaus become weaker and the number of effective 2D channels are decreased, which indicates increasing growth-direction energy dispersion. This enhanced interlayer subband coupling with decreasing L b is further confirmed by the angle-dependence of SdH oscillations. For L b = 20Å, all of 2D-related transport behavior are washed out. A quantitative analysis with calculated subband energy dispersion relations demonstrates the close interplay between superlattice barrier thickness and the strength of the intersubband mixing. These transport results are directly related to successful control of the growth-axis carrier effective mass and will contribute to the development of high-performance HgTe/CdTe SL-based IR photo-voltaic devices and lasers, in which tunneling noise due to diffusion currents can be considerably reduced.

Original languageEnglish
Pages (from-to)584-587
Number of pages4
JournalJournal of Electronic Materials
Volume26
Issue number6
DOIs
Publication statusPublished - 1997 Jan 1

Fingerprint

Superlattices
Molecular beam epitaxy
superlattices
Galvanomagnetic effects
Molecular beams
molecular beams
quantitative analysis
interlayers
plateaus
oscillations
energy
Lasers
Chemical analysis
lasers
Direction compound

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Park, J. W., Lee, J., Moon, Y. M., Choi, J. B., Hahn, M. S., Song, B. K., ... Kim, J. M. (1997). Inter-layer subband mixing in MBE-grown HgTe/CdTe superlattices. Journal of Electronic Materials, 26(6), 584-587. https://doi.org/10.1007/s11664-997-0198-1
Park, J. W. ; Lee, Jaesun ; Moon, Y. M. ; Choi, J. B. ; Hahn, M. S. ; Song, B. K. ; Hou, Y. B. ; Kang, T. W. ; Yoo, Kyung-hwa ; Hoffman, C. A. ; Meyer, J. R. ; Jeoung, Y. T. ; Kim, H. K. ; Kim, J. M. / Inter-layer subband mixing in MBE-grown HgTe/CdTe superlattices. In: Journal of Electronic Materials. 1997 ; Vol. 26, No. 6. pp. 584-587.
@article{896a1581d0364c749932a74305a6e2d5,
title = "Inter-layer subband mixing in MBE-grown HgTe/CdTe superlattices",
abstract = "We report transport results for molecular beam epitaxially grown HgTe/CdTe superlattices (SLs) with CdTe barrier thickness of L b systematically varied from 100{\AA} down to 20{\AA}, and demonstrate the increasing intersubband mixing between adjacent layers with decreasing L b . Magnetotransport data measured at 1.5K and for B up to 10T show monotonously varying features with L b , implying a dimensional change from 2D to quasi-3D. As L b decreases, the quantum Hall plateaus become weaker and the number of effective 2D channels are decreased, which indicates increasing growth-direction energy dispersion. This enhanced interlayer subband coupling with decreasing L b is further confirmed by the angle-dependence of SdH oscillations. For L b = 20{\AA}, all of 2D-related transport behavior are washed out. A quantitative analysis with calculated subband energy dispersion relations demonstrates the close interplay between superlattice barrier thickness and the strength of the intersubband mixing. These transport results are directly related to successful control of the growth-axis carrier effective mass and will contribute to the development of high-performance HgTe/CdTe SL-based IR photo-voltaic devices and lasers, in which tunneling noise due to diffusion currents can be considerably reduced.",
author = "Park, {J. W.} and Jaesun Lee and Moon, {Y. M.} and Choi, {J. B.} and Hahn, {M. S.} and Song, {B. K.} and Hou, {Y. B.} and Kang, {T. W.} and Kyung-hwa Yoo and Hoffman, {C. A.} and Meyer, {J. R.} and Jeoung, {Y. T.} and Kim, {H. K.} and Kim, {J. M.}",
year = "1997",
month = "1",
day = "1",
doi = "10.1007/s11664-997-0198-1",
language = "English",
volume = "26",
pages = "584--587",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "6",

}

Park, JW, Lee, J, Moon, YM, Choi, JB, Hahn, MS, Song, BK, Hou, YB, Kang, TW, Yoo, K, Hoffman, CA, Meyer, JR, Jeoung, YT, Kim, HK & Kim, JM 1997, 'Inter-layer subband mixing in MBE-grown HgTe/CdTe superlattices', Journal of Electronic Materials, vol. 26, no. 6, pp. 584-587. https://doi.org/10.1007/s11664-997-0198-1

Inter-layer subband mixing in MBE-grown HgTe/CdTe superlattices. / Park, J. W.; Lee, Jaesun; Moon, Y. M.; Choi, J. B.; Hahn, M. S.; Song, B. K.; Hou, Y. B.; Kang, T. W.; Yoo, Kyung-hwa; Hoffman, C. A.; Meyer, J. R.; Jeoung, Y. T.; Kim, H. K.; Kim, J. M.

In: Journal of Electronic Materials, Vol. 26, No. 6, 01.01.1997, p. 584-587.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Inter-layer subband mixing in MBE-grown HgTe/CdTe superlattices

AU - Park, J. W.

AU - Lee, Jaesun

AU - Moon, Y. M.

AU - Choi, J. B.

AU - Hahn, M. S.

AU - Song, B. K.

AU - Hou, Y. B.

AU - Kang, T. W.

AU - Yoo, Kyung-hwa

AU - Hoffman, C. A.

AU - Meyer, J. R.

AU - Jeoung, Y. T.

AU - Kim, H. K.

AU - Kim, J. M.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We report transport results for molecular beam epitaxially grown HgTe/CdTe superlattices (SLs) with CdTe barrier thickness of L b systematically varied from 100Å down to 20Å, and demonstrate the increasing intersubband mixing between adjacent layers with decreasing L b . Magnetotransport data measured at 1.5K and for B up to 10T show monotonously varying features with L b , implying a dimensional change from 2D to quasi-3D. As L b decreases, the quantum Hall plateaus become weaker and the number of effective 2D channels are decreased, which indicates increasing growth-direction energy dispersion. This enhanced interlayer subband coupling with decreasing L b is further confirmed by the angle-dependence of SdH oscillations. For L b = 20Å, all of 2D-related transport behavior are washed out. A quantitative analysis with calculated subband energy dispersion relations demonstrates the close interplay between superlattice barrier thickness and the strength of the intersubband mixing. These transport results are directly related to successful control of the growth-axis carrier effective mass and will contribute to the development of high-performance HgTe/CdTe SL-based IR photo-voltaic devices and lasers, in which tunneling noise due to diffusion currents can be considerably reduced.

AB - We report transport results for molecular beam epitaxially grown HgTe/CdTe superlattices (SLs) with CdTe barrier thickness of L b systematically varied from 100Å down to 20Å, and demonstrate the increasing intersubband mixing between adjacent layers with decreasing L b . Magnetotransport data measured at 1.5K and for B up to 10T show monotonously varying features with L b , implying a dimensional change from 2D to quasi-3D. As L b decreases, the quantum Hall plateaus become weaker and the number of effective 2D channels are decreased, which indicates increasing growth-direction energy dispersion. This enhanced interlayer subband coupling with decreasing L b is further confirmed by the angle-dependence of SdH oscillations. For L b = 20Å, all of 2D-related transport behavior are washed out. A quantitative analysis with calculated subband energy dispersion relations demonstrates the close interplay between superlattice barrier thickness and the strength of the intersubband mixing. These transport results are directly related to successful control of the growth-axis carrier effective mass and will contribute to the development of high-performance HgTe/CdTe SL-based IR photo-voltaic devices and lasers, in which tunneling noise due to diffusion currents can be considerably reduced.

UR - http://www.scopus.com/inward/record.url?scp=0343216336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343216336&partnerID=8YFLogxK

U2 - 10.1007/s11664-997-0198-1

DO - 10.1007/s11664-997-0198-1

M3 - Article

AN - SCOPUS:0343216336

VL - 26

SP - 584

EP - 587

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 6

ER -