Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers

Jungwoo Oh, Joe C. Campbell, Shawn G. Thomas, Sushil Bharatan, Rainer Thoma, Craig Jasper, Robert E. Jones, Tom E. Zirkle

Research output: Contribution to journalArticle

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Abstract

We report an interdigitated p-i-n photodetector fabricated on a 1-μm-thick Ge epitaxial layer grown on a Si substrate using a 10-μm-thick graded SiGe buffer layer. A growth rate of 45 Å/s∼60 Å/s was achieved using low-energy plasma enhanced chemical vapor deposition. The Ge epitaxial layer had a threading dislocation density of 105 cm-2 and a rms surface roughness of 3.28 nm. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-μm finger width and 2-μm spacing the a 25 × 28 μm2 active area. At a wavelength of 1.3 μm, the bandwidth was 2.2, 3.5, and 3.8 GHz at bias voltages of -1, -3, and -5 V, respectively. The dark current was 3.2 and 5.0 μA at -3 and -5V, respectively. This photodetector exhibited an external quantum efficiency of 49% at a wavelength of 1.3 μm.

Original languageEnglish
Pages (from-to)1238-1241
Number of pages4
JournalIEEE Journal of Quantum Electronics
Volume38
Issue number9
DOIs
Publication statusPublished - 2002 Sep 1

Fingerprint

Buffer layers
Photodetectors
photometers
buffers
Epitaxial layers
Quantum efficiency
quantum efficiency
Substrates
bandwidth
Bandwidth
Wavelength
Dark currents
Plasma enhanced chemical vapor deposition
Bias voltage
dark current
Dislocations (crystals)
wavelengths
surface roughness
Surface roughness
spacing

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Oh, Jungwoo ; Campbell, Joe C. ; Thomas, Shawn G. ; Bharatan, Sushil ; Thoma, Rainer ; Jasper, Craig ; Jones, Robert E. ; Zirkle, Tom E. / Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers. In: IEEE Journal of Quantum Electronics. 2002 ; Vol. 38, No. 9. pp. 1238-1241.
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Oh, J, Campbell, JC, Thomas, SG, Bharatan, S, Thoma, R, Jasper, C, Jones, RE & Zirkle, TE 2002, 'Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers', IEEE Journal of Quantum Electronics, vol. 38, no. 9, pp. 1238-1241. https://doi.org/10.1109/JQE.2002.802165

Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers. / Oh, Jungwoo; Campbell, Joe C.; Thomas, Shawn G.; Bharatan, Sushil; Thoma, Rainer; Jasper, Craig; Jones, Robert E.; Zirkle, Tom E.

In: IEEE Journal of Quantum Electronics, Vol. 38, No. 9, 01.09.2002, p. 1238-1241.

Research output: Contribution to journalArticle

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AU - Oh, Jungwoo

AU - Campbell, Joe C.

AU - Thomas, Shawn G.

AU - Bharatan, Sushil

AU - Thoma, Rainer

AU - Jasper, Craig

AU - Jones, Robert E.

AU - Zirkle, Tom E.

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AB - We report an interdigitated p-i-n photodetector fabricated on a 1-μm-thick Ge epitaxial layer grown on a Si substrate using a 10-μm-thick graded SiGe buffer layer. A growth rate of 45 Å/s∼60 Å/s was achieved using low-energy plasma enhanced chemical vapor deposition. The Ge epitaxial layer had a threading dislocation density of 105 cm-2 and a rms surface roughness of 3.28 nm. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-μm finger width and 2-μm spacing the a 25 × 28 μm2 active area. At a wavelength of 1.3 μm, the bandwidth was 2.2, 3.5, and 3.8 GHz at bias voltages of -1, -3, and -5 V, respectively. The dark current was 3.2 and 5.0 μA at -3 and -5V, respectively. This photodetector exhibited an external quantum efficiency of 49% at a wavelength of 1.3 μm.

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