Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers

Zhihong Huang, Sanjay K. Banerjee, Jungwoo Oh, Joe C. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An interdigitated Ge-on-Si photodetector has been fabricated, and achieved 73% quantum efficiency at 1.3μm. The internal quantum efficiency is close to unity due to the high quality Ge film grown with thin SiGe buffer layers.

Original languageEnglish
Title of host publication2006 Digest of the LEOS Summer Topical Meetings
Pages42-43
Number of pages2
Publication statusPublished - 2006 Dec 1
Event2006 LEOS Summer Topical Meetings - Quebec City, QC, Canada
Duration: 2006 Jul 172006 Jul 19

Publication series

NameLEOS Summer Topical Meeting
ISSN (Print)1099-4742

Other

Other2006 LEOS Summer Topical Meetings
CountryCanada
CityQuebec City, QC
Period06/7/1706/7/19

Fingerprint

Buffer layers
Quantum efficiency
quantum efficiency
buffers
Photodetectors
photometers
unity

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Huang, Z., Banerjee, S. K., Oh, J., & Campbell, J. C. (2006). Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers. In 2006 Digest of the LEOS Summer Topical Meetings (pp. 42-43). [1694059] (LEOS Summer Topical Meeting).
Huang, Zhihong ; Banerjee, Sanjay K. ; Oh, Jungwoo ; Campbell, Joe C. / Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers. 2006 Digest of the LEOS Summer Topical Meetings. 2006. pp. 42-43 (LEOS Summer Topical Meeting).
@inproceedings{bba00ae3d54444c4a77001d4e333ec1e,
title = "Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers",
abstract = "An interdigitated Ge-on-Si photodetector has been fabricated, and achieved 73{\%} quantum efficiency at 1.3μm. The internal quantum efficiency is close to unity due to the high quality Ge film grown with thin SiGe buffer layers.",
author = "Zhihong Huang and Banerjee, {Sanjay K.} and Jungwoo Oh and Campbell, {Joe C.}",
year = "2006",
month = "12",
day = "1",
language = "English",
isbn = "1424400902",
series = "LEOS Summer Topical Meeting",
pages = "42--43",
booktitle = "2006 Digest of the LEOS Summer Topical Meetings",

}

Huang, Z, Banerjee, SK, Oh, J & Campbell, JC 2006, Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers. in 2006 Digest of the LEOS Summer Topical Meetings., 1694059, LEOS Summer Topical Meeting, pp. 42-43, 2006 LEOS Summer Topical Meetings, Quebec City, QC, Canada, 06/7/17.

Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers. / Huang, Zhihong; Banerjee, Sanjay K.; Oh, Jungwoo; Campbell, Joe C.

2006 Digest of the LEOS Summer Topical Meetings. 2006. p. 42-43 1694059 (LEOS Summer Topical Meeting).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers

AU - Huang, Zhihong

AU - Banerjee, Sanjay K.

AU - Oh, Jungwoo

AU - Campbell, Joe C.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - An interdigitated Ge-on-Si photodetector has been fabricated, and achieved 73% quantum efficiency at 1.3μm. The internal quantum efficiency is close to unity due to the high quality Ge film grown with thin SiGe buffer layers.

AB - An interdigitated Ge-on-Si photodetector has been fabricated, and achieved 73% quantum efficiency at 1.3μm. The internal quantum efficiency is close to unity due to the high quality Ge film grown with thin SiGe buffer layers.

UR - http://www.scopus.com/inward/record.url?scp=34547342570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547342570&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:34547342570

SN - 1424400902

SN - 9781424400904

T3 - LEOS Summer Topical Meeting

SP - 42

EP - 43

BT - 2006 Digest of the LEOS Summer Topical Meetings

ER -

Huang Z, Banerjee SK, Oh J, Campbell JC. Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers. In 2006 Digest of the LEOS Summer Topical Meetings. 2006. p. 42-43. 1694059. (LEOS Summer Topical Meeting).