Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers

Zhihong Huang, Sanjay K. Banerjee, Jungwoo Oh, Joe C. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An interdigitated Ge-on-Si photodetector has been fabricated, and achieved 73% quantum efficiency at 1.3μm. The internal quantum efficiency is close to unity due to the high quality Ge film grown with thin SiGe buffer layers.

Original languageEnglish
Title of host publication2006 Digest of the LEOS Summer Topical Meetings
Pages42-43
Number of pages2
Publication statusPublished - 2006 Dec 1
Event2006 LEOS Summer Topical Meetings - Quebec City, QC, Canada
Duration: 2006 Jul 172006 Jul 19

Publication series

NameLEOS Summer Topical Meeting
ISSN (Print)1099-4742

Other

Other2006 LEOS Summer Topical Meetings
CountryCanada
CityQuebec City, QC
Period06/7/1706/7/19

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Huang, Z., Banerjee, S. K., Oh, J., & Campbell, J. C. (2006). Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers. In 2006 Digest of the LEOS Summer Topical Meetings (pp. 42-43). [1694059] (LEOS Summer Topical Meeting).