Interface analysis of ultrathin SiO2 layers between c-Si substrates and phosphorus-doped poly-Si by theoretical surface potential analysis using the injection-dependent lifetime

Sungjin Choi, Jimin Baek, Taejun Kim, Kwan Hong Min, Myeong Sang Jeong, Hee eun Song, Min Gu Kang, Donghwan Kim, Yoonmook Kang, Hae Seok Lee, Jae Min Myoung, Sungeun Park

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Passivated contact structures are often representative of tunnel oxide passivated contact (TOPCon) and polycrystalline silicon on oxide (POLO) solar cells. These passivated contact technologies in silicon solar cells have experienced great strides in efficiency. However, characteristics analysis of poly-Si/SiO2 applied to TOPCon and POLO solar cells as a carrier-selective and passivated contact is still challenging because the silicon oxide film is very thin (<1.5 nm), poly-Si and silicon oxide properties change during thermal treatment for passivation effects, and dopant diffusion from poly-Si layer to the silicon wafer occurs. In this study, the interfacial analysis was performed by applying an algorithm based on the extended Shockley–Read–Hall (SRH) theory to the P-doped poly-Si/SiO2/c-Si structure. Quantitative parameters of the P-doped poly-Si/SiO2/c-Si interface were extracted by fitting the measured and simulated lifetime curves with algorithms, such as Dit (interface trap density) and Qf (fixed charge), from which we were able to elucidate the passivation effect of the interface. The interface analysis method using this algorithm is meaningful in that it can quantify the passivation characteristics of TOPCon with very thin silicon oxide film. The interface characteristics were also analyzed using the injection-dependent lifetime after thermal treatment of P-doped poly-Si/SiO2/c-Si samples for passivation effect. After the 850°C thermal treatment, the following best passivation effects were verified, namely, ψs = 0.248 eV, Dit = 1.0 × 1011 cm−2·eV−1, Qf = 2.4 × 1012 cm−2, and J02 = 370 pA·cm−2. Through the analysis model using carrier lifetime theory, we investigated quantitatively the passivation properties of P-doped poly-Si/SiO2/c-Si.

Original languageEnglish
Pages (from-to)32-46
Number of pages15
JournalProgress in Photovoltaics: Research and Applications
Volume29
Issue number1
DOIs
Publication statusPublished - 2021 Jan

Bibliographical note

Funding Information:
This work was conducted under the framework of the Research and Development of the Korea Institute of Energy Research (C0‐2402) and the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning (2017M1A2A2086911).

Publisher Copyright:
© 2020 John Wiley & Sons, Ltd.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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