Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

Jungwoo Oh, Prashant Majhi, Hsing Huang Tseng, Raj Jammy, David Q. Kelly, Sanjay K. Banerjee, Joe C. Campbell

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The authors report on interface characteristics of ZrO2 high-k gate dielectrics on Ge epitaxial layers integrated on Si substrates. For surface passivation, thermal desorption of Ge native oxide and Ge nitridation processes is applied to epitaxial Ge capacitor layers. Metal-oxide-semiconductor capacitors exhibit excellent electrical characteristics with a gate leakage current density of 6 × 10- 7-1 × 10- 6 A/cm2 with a capacitance equivalent thickness of 1.5-1.3 nm at a gate voltage of 1 V. Thermal behavior of Ge native oxide and nitrided Ge layers is correlated with electrical characteristics.

Original languageEnglish
Pages (from-to)4107-4110
Number of pages4
JournalThin Solid Films
Volume516
Issue number12
DOIs
Publication statusPublished - 2008 Apr 30

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Interface characteristics of ZrO<sub>2</sub> high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation'. Together they form a unique fingerprint.

  • Cite this