Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

Jungwoo Oh, Prashant Majhi, Hsing Huang Tseng, Raj Jammy, David Q. Kelly, Sanjay K. Banerjee, Joe C. Campbell

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The authors report on interface characteristics of ZrO2 high-k gate dielectrics on Ge epitaxial layers integrated on Si substrates. For surface passivation, thermal desorption of Ge native oxide and Ge nitridation processes is applied to epitaxial Ge capacitor layers. Metal-oxide-semiconductor capacitors exhibit excellent electrical characteristics with a gate leakage current density of 6 × 10- 7-1 × 10- 6 A/cm2 with a capacitance equivalent thickness of 1.5-1.3 nm at a gate voltage of 1 V. Thermal behavior of Ge native oxide and nitrided Ge layers is correlated with electrical characteristics.

Original languageEnglish
Pages (from-to)4107-4110
Number of pages4
JournalThin Solid Films
Volume516
Issue number12
DOIs
Publication statusPublished - 2008 Apr 30

Fingerprint

Thermal desorption
Nitridation
Gate dielectrics
Oxides
capacitors
Capacitors
desorption
oxides
Epitaxial layers
Passivation
Leakage currents
Capacitance
Current density
Metals
metal oxide semiconductors
passivity
Electric potential
leakage
Substrates
capacitance

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Oh, Jungwoo ; Majhi, Prashant ; Tseng, Hsing Huang ; Jammy, Raj ; Kelly, David Q. ; Banerjee, Sanjay K. ; Campbell, Joe C. / Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation. In: Thin Solid Films. 2008 ; Vol. 516, No. 12. pp. 4107-4110.
@article{f8c7c3873c1b4a7ea7fe7600fb5facd4,
title = "Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation",
abstract = "The authors report on interface characteristics of ZrO2 high-k gate dielectrics on Ge epitaxial layers integrated on Si substrates. For surface passivation, thermal desorption of Ge native oxide and Ge nitridation processes is applied to epitaxial Ge capacitor layers. Metal-oxide-semiconductor capacitors exhibit excellent electrical characteristics with a gate leakage current density of 6 × 10- 7-1 × 10- 6 A/cm2 with a capacitance equivalent thickness of 1.5-1.3 nm at a gate voltage of 1 V. Thermal behavior of Ge native oxide and nitrided Ge layers is correlated with electrical characteristics.",
author = "Jungwoo Oh and Prashant Majhi and Tseng, {Hsing Huang} and Raj Jammy and Kelly, {David Q.} and Banerjee, {Sanjay K.} and Campbell, {Joe C.}",
year = "2008",
month = "4",
day = "30",
doi = "10.1016/j.tsf.2007.10.012",
language = "English",
volume = "516",
pages = "4107--4110",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "12",

}

Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation. / Oh, Jungwoo; Majhi, Prashant; Tseng, Hsing Huang; Jammy, Raj; Kelly, David Q.; Banerjee, Sanjay K.; Campbell, Joe C.

In: Thin Solid Films, Vol. 516, No. 12, 30.04.2008, p. 4107-4110.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Tseng, Hsing Huang

AU - Jammy, Raj

AU - Kelly, David Q.

AU - Banerjee, Sanjay K.

AU - Campbell, Joe C.

PY - 2008/4/30

Y1 - 2008/4/30

N2 - The authors report on interface characteristics of ZrO2 high-k gate dielectrics on Ge epitaxial layers integrated on Si substrates. For surface passivation, thermal desorption of Ge native oxide and Ge nitridation processes is applied to epitaxial Ge capacitor layers. Metal-oxide-semiconductor capacitors exhibit excellent electrical characteristics with a gate leakage current density of 6 × 10- 7-1 × 10- 6 A/cm2 with a capacitance equivalent thickness of 1.5-1.3 nm at a gate voltage of 1 V. Thermal behavior of Ge native oxide and nitrided Ge layers is correlated with electrical characteristics.

AB - The authors report on interface characteristics of ZrO2 high-k gate dielectrics on Ge epitaxial layers integrated on Si substrates. For surface passivation, thermal desorption of Ge native oxide and Ge nitridation processes is applied to epitaxial Ge capacitor layers. Metal-oxide-semiconductor capacitors exhibit excellent electrical characteristics with a gate leakage current density of 6 × 10- 7-1 × 10- 6 A/cm2 with a capacitance equivalent thickness of 1.5-1.3 nm at a gate voltage of 1 V. Thermal behavior of Ge native oxide and nitrided Ge layers is correlated with electrical characteristics.

UR - http://www.scopus.com/inward/record.url?scp=40849106707&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40849106707&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.10.012

DO - 10.1016/j.tsf.2007.10.012

M3 - Article

VL - 516

SP - 4107

EP - 4110

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 12

ER -