Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

Jungwoo Oh, Prashant Majhi, Hsing Huang Tseng, Raj Jammy, David Q. Kelly, Sanjay K. Banerjee, Joe C. Campbell

Research output: Contribution to journalArticle

6 Citations (Scopus)

Fingerprint Dive into the research topics of 'Interface characteristics of ZrO<sub>2</sub> high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy