Interface control of Gd2O3/GaAs system using pre-deposition of Gd metal on GaAs substrate with native oxides

Jun Kyu Yang, Min Gu Kang, Hyung-Ho Park

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Ultrathin Gd metal was evaporated on GaAs surface covered with native oxides. X-Ray photoelectron spectroscopic studies revealed that GaAs-native oxides could be reduced during the deposition of Gd metal. However, the elemental forms of Ga and As were not observed but the oxidation of Gd metal was confirmed from LMM Auger electron spectra, Gd 3d 5/2, and O 1s photoelectron spectra. The Gd coated GaAs substrates were heated at 400 °C and Gd2O3 films were successively deposited with a well developed crystalline state. This reductive metal deposition prior to oxide formation improved interfacial quality of GaAs without previous chemical etching or passivation. Capacitance-voltage (C-V) measurements at 1 MHz indicated that a good interfacial state between Gd2O3 and GaAs could be obtained appropriate for metal-oxide-semiconductor (MOS) applications through a two step deposition of Gd and Gd2O3.

Original languageEnglish
Pages (from-to)571-574
Number of pages4
JournalThin Solid Films
Volume420-421
DOIs
Publication statusPublished - 2002 Dec 2

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Oxides
Metals
oxides
Substrates
metals
Photoelectrons
photoelectrons
metal oxide semiconductors
Capacitance measurement
electrical measurement
passivity
Voltage measurement
Passivation
capacitance
etching
Etching
oxidation
gallium arsenide
Crystalline materials
X rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Interface control of Gd2O3/GaAs system using pre-deposition of Gd metal on GaAs substrate with native oxides",
abstract = "Ultrathin Gd metal was evaporated on GaAs surface covered with native oxides. X-Ray photoelectron spectroscopic studies revealed that GaAs-native oxides could be reduced during the deposition of Gd metal. However, the elemental forms of Ga and As were not observed but the oxidation of Gd metal was confirmed from LMM Auger electron spectra, Gd 3d 5/2, and O 1s photoelectron spectra. The Gd coated GaAs substrates were heated at 400 °C and Gd2O3 films were successively deposited with a well developed crystalline state. This reductive metal deposition prior to oxide formation improved interfacial quality of GaAs without previous chemical etching or passivation. Capacitance-voltage (C-V) measurements at 1 MHz indicated that a good interfacial state between Gd2O3 and GaAs could be obtained appropriate for metal-oxide-semiconductor (MOS) applications through a two step deposition of Gd and Gd2O3.",
author = "Yang, {Jun Kyu} and Kang, {Min Gu} and Hyung-Ho Park",
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Interface control of Gd2O3/GaAs system using pre-deposition of Gd metal on GaAs substrate with native oxides. / Yang, Jun Kyu; Kang, Min Gu; Park, Hyung-Ho.

In: Thin Solid Films, Vol. 420-421, 02.12.2002, p. 571-574.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interface control of Gd2O3/GaAs system using pre-deposition of Gd metal on GaAs substrate with native oxides

AU - Yang, Jun Kyu

AU - Kang, Min Gu

AU - Park, Hyung-Ho

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N2 - Ultrathin Gd metal was evaporated on GaAs surface covered with native oxides. X-Ray photoelectron spectroscopic studies revealed that GaAs-native oxides could be reduced during the deposition of Gd metal. However, the elemental forms of Ga and As were not observed but the oxidation of Gd metal was confirmed from LMM Auger electron spectra, Gd 3d 5/2, and O 1s photoelectron spectra. The Gd coated GaAs substrates were heated at 400 °C and Gd2O3 films were successively deposited with a well developed crystalline state. This reductive metal deposition prior to oxide formation improved interfacial quality of GaAs without previous chemical etching or passivation. Capacitance-voltage (C-V) measurements at 1 MHz indicated that a good interfacial state between Gd2O3 and GaAs could be obtained appropriate for metal-oxide-semiconductor (MOS) applications through a two step deposition of Gd and Gd2O3.

AB - Ultrathin Gd metal was evaporated on GaAs surface covered with native oxides. X-Ray photoelectron spectroscopic studies revealed that GaAs-native oxides could be reduced during the deposition of Gd metal. However, the elemental forms of Ga and As were not observed but the oxidation of Gd metal was confirmed from LMM Auger electron spectra, Gd 3d 5/2, and O 1s photoelectron spectra. The Gd coated GaAs substrates were heated at 400 °C and Gd2O3 films were successively deposited with a well developed crystalline state. This reductive metal deposition prior to oxide formation improved interfacial quality of GaAs without previous chemical etching or passivation. Capacitance-voltage (C-V) measurements at 1 MHz indicated that a good interfacial state between Gd2O3 and GaAs could be obtained appropriate for metal-oxide-semiconductor (MOS) applications through a two step deposition of Gd and Gd2O3.

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