Y-metal deposition on chemical oxide of Si and vacuum annealing was adopted to control the interface for the formation of Y 2O 3. Free interfacial SiO 2 state and Y-silicate with small amount of Y 2O 3 on top was obtained through vacuum annealing of Y-metal on the chemical oxide system. Furthermore, an effective suppression of interfacial SiO 2 formation was also observed during the formation of Y 2O 3 on the interface-controlled system and an improvement of electrical properties was achieved. When compared with Y 2O 3 on a HF-cleaned Si system, a small positive shift of flatband voltage in capacitance-voltage characteristic was observed with Y 2O 3 on the interface-controlled system with Y-silicate. A smaller leakage-current behavior of 1-2 orders was obtained with the controlled system than with Y 2O 3 on a HF-cleaned Si system, with 2.5 V higher breakdown voltage.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2005 Jan 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)