Interface control of Y 2O 3 thin film with Si(100) in a metal-(ferroelectric)-insulator-semiconductor structure

Chang Ki Lee, Hyung-Ho Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Y-metal deposition on chemical oxide of Si and vacuum annealing was adopted to control the interface for the formation of Y 2O 3. Free interfacial SiO 2 state and Y-silicate with small amount of Y 2O 3 on top was obtained through vacuum annealing of Y-metal on the chemical oxide system. Furthermore, an effective suppression of interfacial SiO 2 formation was also observed during the formation of Y 2O 3 on the interface-controlled system and an improvement of electrical properties was achieved. When compared with Y 2O 3 on a HF-cleaned Si system, a small positive shift of flatband voltage in capacitance-voltage characteristic was observed with Y 2O 3 on the interface-controlled system with Y-silicate. A smaller leakage-current behavior of 1-2 orders was obtained with the controlled system than with Y 2O 3 on a HF-cleaned Si system, with 2.5 V higher breakdown voltage.

Original languageEnglish
Pages (from-to)254-257
Number of pages4
JournalJournal of the Korean Physical Society
Volume46
Issue number1
Publication statusPublished - 2005 Jan 1

Fingerprint

insulators
silicates
thin films
metals
vacuum
annealing
oxides
capacitance-voltage characteristics
electrical faults
leakage
electrical properties
retarding
shift
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "Y-metal deposition on chemical oxide of Si and vacuum annealing was adopted to control the interface for the formation of Y 2O 3. Free interfacial SiO 2 state and Y-silicate with small amount of Y 2O 3 on top was obtained through vacuum annealing of Y-metal on the chemical oxide system. Furthermore, an effective suppression of interfacial SiO 2 formation was also observed during the formation of Y 2O 3 on the interface-controlled system and an improvement of electrical properties was achieved. When compared with Y 2O 3 on a HF-cleaned Si system, a small positive shift of flatband voltage in capacitance-voltage characteristic was observed with Y 2O 3 on the interface-controlled system with Y-silicate. A smaller leakage-current behavior of 1-2 orders was obtained with the controlled system than with Y 2O 3 on a HF-cleaned Si system, with 2.5 V higher breakdown voltage.",
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Interface control of Y 2O 3 thin film with Si(100) in a metal-(ferroelectric)-insulator-semiconductor structure. / Lee, Chang Ki; Park, Hyung-Ho.

In: Journal of the Korean Physical Society, Vol. 46, No. 1, 01.01.2005, p. 254-257.

Research output: Contribution to journalArticle

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AU - Park, Hyung-Ho

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