Interface-controlled gate of GaAs metal-semiconductor field-effect transistor

Min Gu Kang, Hyung Ho Park, Haecheon Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A two-step passivation using sulfidation and hydrogenation has been reported to improve the gate leakage current and breakdown voltage of the GaAs metal-semiconductor field-effect transistor (MESFET). The combination of S passivation and interfacial hydrogenation was applied to the gate line in the MESFET; leakage current was reduced over an order and breakdown voltage was improved to a maximum level of 14 V from 10 V. It was revealed that the improvement of device properties after this two-step treatment resulted from the suppression of defective states such as oxides and excess As at the interface of the gate junction. The evolution of their bonding states through the treatment was found to have a close relationship with the device parameters.

Original languageEnglish
Pages (from-to)2499-2501
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number14
DOIs
Publication statusPublished - 2002 Apr 8

Fingerprint

field effect transistors
electrical faults
passivity
hydrogenation
leakage
metals
sulfidation
retarding
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kang, Min Gu ; Park, Hyung Ho ; Kim, Haecheon. / Interface-controlled gate of GaAs metal-semiconductor field-effect transistor. In: Applied Physics Letters. 2002 ; Vol. 80, No. 14. pp. 2499-2501.
@article{b777aafe830d428a8efa64a923a353ee,
title = "Interface-controlled gate of GaAs metal-semiconductor field-effect transistor",
abstract = "A two-step passivation using sulfidation and hydrogenation has been reported to improve the gate leakage current and breakdown voltage of the GaAs metal-semiconductor field-effect transistor (MESFET). The combination of S passivation and interfacial hydrogenation was applied to the gate line in the MESFET; leakage current was reduced over an order and breakdown voltage was improved to a maximum level of 14 V from 10 V. It was revealed that the improvement of device properties after this two-step treatment resulted from the suppression of defective states such as oxides and excess As at the interface of the gate junction. The evolution of their bonding states through the treatment was found to have a close relationship with the device parameters.",
author = "Kang, {Min Gu} and Park, {Hyung Ho} and Haecheon Kim",
year = "2002",
month = "4",
day = "8",
doi = "10.1063/1.1467975",
language = "English",
volume = "80",
pages = "2499--2501",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

Interface-controlled gate of GaAs metal-semiconductor field-effect transistor. / Kang, Min Gu; Park, Hyung Ho; Kim, Haecheon.

In: Applied Physics Letters, Vol. 80, No. 14, 08.04.2002, p. 2499-2501.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interface-controlled gate of GaAs metal-semiconductor field-effect transistor

AU - Kang, Min Gu

AU - Park, Hyung Ho

AU - Kim, Haecheon

PY - 2002/4/8

Y1 - 2002/4/8

N2 - A two-step passivation using sulfidation and hydrogenation has been reported to improve the gate leakage current and breakdown voltage of the GaAs metal-semiconductor field-effect transistor (MESFET). The combination of S passivation and interfacial hydrogenation was applied to the gate line in the MESFET; leakage current was reduced over an order and breakdown voltage was improved to a maximum level of 14 V from 10 V. It was revealed that the improvement of device properties after this two-step treatment resulted from the suppression of defective states such as oxides and excess As at the interface of the gate junction. The evolution of their bonding states through the treatment was found to have a close relationship with the device parameters.

AB - A two-step passivation using sulfidation and hydrogenation has been reported to improve the gate leakage current and breakdown voltage of the GaAs metal-semiconductor field-effect transistor (MESFET). The combination of S passivation and interfacial hydrogenation was applied to the gate line in the MESFET; leakage current was reduced over an order and breakdown voltage was improved to a maximum level of 14 V from 10 V. It was revealed that the improvement of device properties after this two-step treatment resulted from the suppression of defective states such as oxides and excess As at the interface of the gate junction. The evolution of their bonding states through the treatment was found to have a close relationship with the device parameters.

UR - http://www.scopus.com/inward/record.url?scp=79956052205&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956052205&partnerID=8YFLogxK

U2 - 10.1063/1.1467975

DO - 10.1063/1.1467975

M3 - Article

VL - 80

SP - 2499

EP - 2501

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -