Abstract
The formation of Gd 2 O 3 /substrate-GaAs structure was accomplished by two-step electron-beam (e-beam) deposition including ultra-thin Gd-metal and successive Gd 2 O 3 layers. The deposition was carried out on HCl-cleaned GaAs containing elemental As on it. The pre-deposition of Gd-metal removes elemental As state in GaAs surface and forms interfacial state free from GaAs-oxides. However, Gd-metal turns to be oxide during the deposition by absorbing oxygen from GaAs surface and atmosphere. The successive deposition of Gd 2 O 3 was performed with in situ anneal of the substrate and this permitted preferential growth of Gd 2 O 3 with oriental relationship with substrate GaAs as Gd 2 O 3 {1 1 1}〈1 1 0〉||GaAs{0 0 1}〈4 7 0〉 with less than 1.5% of lattice mismatching. Capacitance-voltage (C-V) and current density-voltage (J-V) measurements indicated that the interface was seriously degraded when the anneal temperature exceeded 600 °C. The feasibility of Gd 2 O 3 film as a buffer layer for ferroelectric-gate/GaAs structure was proved.
| Original language | English |
|---|---|
| Pages (from-to) | 203-207 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 216 |
| Issue number | 1-4 SPEC. |
| DOIs | |
| Publication status | Published - 2003 Jun 30 |
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All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
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Interface-controlled Gd 2 O 3 /GaAs system for ferroelectric memory application . / Yang, Jun Kyu; Kim, Woo Sik; Park, Hyung-Ho.
In: Applied Surface Science, Vol. 216, No. 1-4 SPEC., 30.06.2003, p. 203-207.Research output: Contribution to journal › Article
TY - JOUR
T1 - Interface-controlled Gd 2 O 3 /GaAs system for ferroelectric memory application
AU - Yang, Jun Kyu
AU - Kim, Woo Sik
AU - Park, Hyung-Ho
PY - 2003/6/30
Y1 - 2003/6/30
N2 - The formation of Gd 2 O 3 /substrate-GaAs structure was accomplished by two-step electron-beam (e-beam) deposition including ultra-thin Gd-metal and successive Gd 2 O 3 layers. The deposition was carried out on HCl-cleaned GaAs containing elemental As on it. The pre-deposition of Gd-metal removes elemental As state in GaAs surface and forms interfacial state free from GaAs-oxides. However, Gd-metal turns to be oxide during the deposition by absorbing oxygen from GaAs surface and atmosphere. The successive deposition of Gd 2 O 3 was performed with in situ anneal of the substrate and this permitted preferential growth of Gd 2 O 3 with oriental relationship with substrate GaAs as Gd 2 O 3 {1 1 1}〈1 1 0〉||GaAs{0 0 1}〈4 7 0〉 with less than 1.5% of lattice mismatching. Capacitance-voltage (C-V) and current density-voltage (J-V) measurements indicated that the interface was seriously degraded when the anneal temperature exceeded 600 °C. The feasibility of Gd 2 O 3 film as a buffer layer for ferroelectric-gate/GaAs structure was proved.
AB - The formation of Gd 2 O 3 /substrate-GaAs structure was accomplished by two-step electron-beam (e-beam) deposition including ultra-thin Gd-metal and successive Gd 2 O 3 layers. The deposition was carried out on HCl-cleaned GaAs containing elemental As on it. The pre-deposition of Gd-metal removes elemental As state in GaAs surface and forms interfacial state free from GaAs-oxides. However, Gd-metal turns to be oxide during the deposition by absorbing oxygen from GaAs surface and atmosphere. The successive deposition of Gd 2 O 3 was performed with in situ anneal of the substrate and this permitted preferential growth of Gd 2 O 3 with oriental relationship with substrate GaAs as Gd 2 O 3 {1 1 1}〈1 1 0〉||GaAs{0 0 1}〈4 7 0〉 with less than 1.5% of lattice mismatching. Capacitance-voltage (C-V) and current density-voltage (J-V) measurements indicated that the interface was seriously degraded when the anneal temperature exceeded 600 °C. The feasibility of Gd 2 O 3 film as a buffer layer for ferroelectric-gate/GaAs structure was proved.
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U2 - 10.1016/S0169-4332(03)00434-3
DO - 10.1016/S0169-4332(03)00434-3
M3 - Article
AN - SCOPUS:0038007900
VL - 216
SP - 203
EP - 207
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4 SPEC.
ER -