Interface-controlled Gd                         2                         O                         3                         /GaAs system for ferroelectric memory application

Jun Kyu Yang; Woo Sik Kim; Hyung Ho Park

doi:10.1016/S0169-4332(03)00434-3

Interface-controlled Gd ₂ O ₃ /GaAs system for ferroelectric memory application

Jun Kyu Yang, Woo Sik Kim, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The formation of Gd ₂ O ₃ /substrate-GaAs structure was accomplished by two-step electron-beam (e-beam) deposition including ultra-thin Gd-metal and successive Gd ₂ O ₃ layers. The deposition was carried out on HCl-cleaned GaAs containing elemental As on it. The pre-deposition of Gd-metal removes elemental As state in GaAs surface and forms interfacial state free from GaAs-oxides. However, Gd-metal turns to be oxide during the deposition by absorbing oxygen from GaAs surface and atmosphere. The successive deposition of Gd ₂ O ₃ was performed with in situ anneal of the substrate and this permitted preferential growth of Gd ₂ O ₃ with oriental relationship with substrate GaAs as Gd ₂ O ₃ {1 1 1}〈1 1 0〉||GaAs{0 0 1}〈4 7 0〉 with less than 1.5% of lattice mismatching. Capacitance-voltage (C-V) and current density-voltage (J-V) measurements indicated that the interface was seriously degraded when the anneal temperature exceeded 600 °C. The feasibility of Gd ₂ O ₃ film as a buffer layer for ferroelectric-gate/GaAs structure was proved.

Original language	English
Pages (from-to)	203-207
Number of pages	5
Journal	Applied Surface Science
Volume	216
Issue number	1-4 SPEC.
DOIs	https://doi.org/10.1016/S0169-4332(03)00434-3
Publication status	Published - 2003 Jun 30

Bibliographical note

Funding Information:
The authors wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 2000.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = " Interface-controlled Gd 2 O 3 /GaAs system for ferroelectric memory application ",

abstract = " The formation of Gd 2 O 3 /substrate-GaAs structure was accomplished by two-step electron-beam (e-beam) deposition including ultra-thin Gd-metal and successive Gd 2 O 3 layers. The deposition was carried out on HCl-cleaned GaAs containing elemental As on it. The pre-deposition of Gd-metal removes elemental As state in GaAs surface and forms interfacial state free from GaAs-oxides. However, Gd-metal turns to be oxide during the deposition by absorbing oxygen from GaAs surface and atmosphere. The successive deposition of Gd 2 O 3 was performed with in situ anneal of the substrate and this permitted preferential growth of Gd 2 O 3 with oriental relationship with substrate GaAs as Gd 2 O 3 {1 1 1}〈1 1 0〉||GaAs{0 0 1}〈4 7 0〉 with less than 1.5% of lattice mismatching. Capacitance-voltage (C-V) and current density-voltage (J-V) measurements indicated that the interface was seriously degraded when the anneal temperature exceeded 600 °C. The feasibility of Gd 2 O 3 film as a buffer layer for ferroelectric-gate/GaAs structure was proved.",

author = "Yang, {Jun Kyu} and Kim, {Woo Sik} and Park, {Hyung Ho}",

note = "Funding Information: The authors wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 2000. ",

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doi = "10.1016/S0169-4332(03)00434-3",

language = "English",

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journal = "Applied Surface Science",

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Interface-controlled Gd ₂ O ₃ /GaAs system for ferroelectric memory application . / Yang, Jun Kyu; Kim, Woo Sik; Park, Hyung Ho.

In: Applied Surface Science, Vol. 216, No. 1-4 SPEC., 30.06.2003, p. 203-207.

Research output: Contribution to journal › Article › peer-review

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AU - Park, Hyung Ho

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PY - 2003/6/30

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