Interface-controlled Gd 2 O 3 /GaAs system for ferroelectric memory application

Jun Kyu Yang, Woo Sik Kim, Hyung-Ho Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The formation of Gd 2 O 3 /substrate-GaAs structure was accomplished by two-step electron-beam (e-beam) deposition including ultra-thin Gd-metal and successive Gd 2 O 3 layers. The deposition was carried out on HCl-cleaned GaAs containing elemental As on it. The pre-deposition of Gd-metal removes elemental As state in GaAs surface and forms interfacial state free from GaAs-oxides. However, Gd-metal turns to be oxide during the deposition by absorbing oxygen from GaAs surface and atmosphere. The successive deposition of Gd 2 O 3 was performed with in situ anneal of the substrate and this permitted preferential growth of Gd 2 O 3 with oriental relationship with substrate GaAs as Gd 2 O 3 {1 1 1}〈1 1 0〉||GaAs{0 0 1}〈4 7 0〉 with less than 1.5% of lattice mismatching. Capacitance-voltage (C-V) and current density-voltage (J-V) measurements indicated that the interface was seriously degraded when the anneal temperature exceeded 600 °C. The feasibility of Gd 2 O 3 film as a buffer layer for ferroelectric-gate/GaAs structure was proved.

Original languageEnglish
Pages (from-to)203-207
Number of pages5
JournalApplied Surface Science
Volume216
Issue number1-4 SPEC.
DOIs
Publication statusPublished - 2003 Jun 30

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Ferroelectric materials
Data storage equipment
Substrates
Metals
Oxides
Electric potential
Buffer layers
Electron beams
Capacitance
Current density
gallium arsenide
Oxygen
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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abstract = "The formation of Gd 2 O 3 /substrate-GaAs structure was accomplished by two-step electron-beam (e-beam) deposition including ultra-thin Gd-metal and successive Gd 2 O 3 layers. The deposition was carried out on HCl-cleaned GaAs containing elemental As on it. The pre-deposition of Gd-metal removes elemental As state in GaAs surface and forms interfacial state free from GaAs-oxides. However, Gd-metal turns to be oxide during the deposition by absorbing oxygen from GaAs surface and atmosphere. The successive deposition of Gd 2 O 3 was performed with in situ anneal of the substrate and this permitted preferential growth of Gd 2 O 3 with oriental relationship with substrate GaAs as Gd 2 O 3 {1 1 1}〈1 1 0〉||GaAs{0 0 1}〈4 7 0〉 with less than 1.5{\%} of lattice mismatching. Capacitance-voltage (C-V) and current density-voltage (J-V) measurements indicated that the interface was seriously degraded when the anneal temperature exceeded 600 °C. The feasibility of Gd 2 O 3 film as a buffer layer for ferroelectric-gate/GaAs structure was proved.",
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Interface-controlled Gd 2 O 3 /GaAs system for ferroelectric memory application . / Yang, Jun Kyu; Kim, Woo Sik; Park, Hyung-Ho.

In: Applied Surface Science, Vol. 216, No. 1-4 SPEC., 30.06.2003, p. 203-207.

Research output: Contribution to journalArticle

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