Abstract
The formation of Gd 2 O 3 /substrate-GaAs structure was accomplished by two-step electron-beam (e-beam) deposition including ultra-thin Gd-metal and successive Gd 2 O 3 layers. The deposition was carried out on HCl-cleaned GaAs containing elemental As on it. The pre-deposition of Gd-metal removes elemental As state in GaAs surface and forms interfacial state free from GaAs-oxides. However, Gd-metal turns to be oxide during the deposition by absorbing oxygen from GaAs surface and atmosphere. The successive deposition of Gd 2 O 3 was performed with in situ anneal of the substrate and this permitted preferential growth of Gd 2 O 3 with oriental relationship with substrate GaAs as Gd 2 O 3 {1 1 1}〈1 1 0〉||GaAs{0 0 1}〈4 7 0〉 with less than 1.5% of lattice mismatching. Capacitance-voltage (C-V) and current density-voltage (J-V) measurements indicated that the interface was seriously degraded when the anneal temperature exceeded 600 °C. The feasibility of Gd 2 O 3 film as a buffer layer for ferroelectric-gate/GaAs structure was proved.
Original language | English |
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Pages (from-to) | 203-207 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 216 |
Issue number | 1-4 SPEC. |
DOIs | |
Publication status | Published - 2003 Jun 30 |
Bibliographical note
Funding Information:The authors wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 2000.
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films