Alkali metal halide-assisted chemical vapor deposition (CVD) methods can produce wafer-scale uniform monolayer transition metal dichalcogenides (TMDs). Further defect engineering is necessary to obtain high-performance functional devices. While defect engineering has focused on the surface of the monolayer TMDs or the contact property, interface defect engineering is rare and non-trivial. Based on a NaCl-assisted CVD-grown large-scale uniform MoS2 monolayer on SiO2/Si substrate, a trace amount of Na cations is present, residing at the SiO2 substrate during the CVD-growth process and contributes to the n-type doping into the supported monolayer MoS2. Furthermore, the residual Na cations are electrically moved toward the bottom side of monolayer MoS2 to passivate the interfacial defects.
|Journal||Advanced Materials Interfaces|
|Publication status||Published - 2021 Jul 23|
Bibliographical noteFunding Information:
S.W.H. and W.S.Y. contributed equally to this work. This work was supported by the Basic Science Research Program and Priority Research Centers through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grant Nos. 2020R1A2C1014205, 2018R1A4A1020696, 2018R1D1A1A09084143, 2019R1I1A3A01063856, and 2019R1A6A1A11053838) and the DGIST R&D Program (21‐IT‐01 and 20‐HRHR‐NT‐06) funded by the Ministry of Science, ICT, and the Future Planning. Experiments at PLS‐II were supported in part by MSICT and POSTECH.
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All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering