Interface engineering for a stable chemical structure of oxidized-black phosphorus: Via self-reduction in AlOx atomic layer deposition

Dae Kyoung Kim, Jimin Chae, Seok Bo Hong, Hanbum Park, Kwang Sik Jeong, Hyun Woo Park, Se Ra Kwon, Kwun Bum Chung, Mann Ho Cho

Research output: Contribution to journalArticle

Abstract

We evaluated the change in the chemical structure between dielectrics (AlOx and HfOx) grown by atomic layer deposition (ALD) and oxidized black phosphorus (BP), as a function of air exposure time. Chemical and structural analyses of the oxidized phosphorus species (PxOy) were performed using atomic force microscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, first-principles density functional theory calculations, and the electrical characteristics of field-effect transistors (FETs). Based on the combined experiments and theoretical investigations, we clearly show that oxidized phosphorus species (PxOy, until exposed for 24 h) are significantly decreased (self-reduction) during the ALD of AlOx. In particular, the field effect characteristics of a FET device based on Al2O3/AlOx/oxidized BP improved significantly with enhanced electrical properties, a mobility of ∼253 cm2 V-1 s-1 and an on-off ratio of ∼105, compared to those of HfO2/HfOx/oxidized BP with a mobility of ∼97 cm2 V-1 s-1 and an on-off ratio of ∼103-104. These distinct differences result from a significantly decreased interface trap density (Dit ∼ 1011 cm-2 eV-1) and subthreshold gate swing (SS ∼ 270 mV dec-1) in the BP device caused by the formation of stable energy states at the AlOx/oxidized BP interface, even with BP oxidized by air exposure.

Original languageEnglish
Pages (from-to)22896-22907
Number of pages12
JournalNanoscale
Volume10
Issue number48
DOIs
Publication statusPublished - 2018 Dec 28

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Atomic layer deposition
Phosphorus
Field effect transistors
Air
Electron energy levels
Density functional theory
Atomic force microscopy
Electric properties
X ray photoelectron spectroscopy
Transmission electron microscopy
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Kim, Dae Kyoung ; Chae, Jimin ; Hong, Seok Bo ; Park, Hanbum ; Jeong, Kwang Sik ; Park, Hyun Woo ; Kwon, Se Ra ; Chung, Kwun Bum ; Cho, Mann Ho. / Interface engineering for a stable chemical structure of oxidized-black phosphorus : Via self-reduction in AlOx atomic layer deposition. In: Nanoscale. 2018 ; Vol. 10, No. 48. pp. 22896-22907.
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Interface engineering for a stable chemical structure of oxidized-black phosphorus : Via self-reduction in AlOx atomic layer deposition. / Kim, Dae Kyoung; Chae, Jimin; Hong, Seok Bo; Park, Hanbum; Jeong, Kwang Sik; Park, Hyun Woo; Kwon, Se Ra; Chung, Kwun Bum; Cho, Mann Ho.

In: Nanoscale, Vol. 10, No. 48, 28.12.2018, p. 22896-22907.

Research output: Contribution to journalArticle

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T2 - Via self-reduction in AlOx atomic layer deposition

AU - Kim, Dae Kyoung

AU - Chae, Jimin

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AU - Park, Hanbum

AU - Jeong, Kwang Sik

AU - Park, Hyun Woo

AU - Kwon, Se Ra

AU - Chung, Kwun Bum

AU - Cho, Mann Ho

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