Interface location controlled dual stacked solution-processed In-Ga-Zn-0 thin film transistors for improved electrical performances

Jae Won Na, Yeong Gyu Kim, Hyun Jae Kim

Research output: Contribution to journalConference article

Abstract

Indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with dual stacked active layers of different molarities are fabricated to improve their electrical performances. By controlling the molarities, the IGZO TFTs exhibit an enhanced field-effect mobility and positive bias stress stability.

Original languageEnglish
Pages (from-to)1224-1227
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume46
Issue numberBook 3
DOIs
Publication statusPublished - 2015 Jun 1
Event2015 SID International Symposium - San Jose, United States
Duration: 2015 Jun 4 → …

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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