Interface location controlled dual stacked solution-processed In-Ga-Zn-0 thin film transistors for improved electrical performances

Jae Won Na; Yeong Gyu Kim; Hyun Jae Kim

doi:10.1002/sdtp.10068

Interface location controlled dual stacked solution-processed In-Ga-Zn-0 thin film transistors for improved electrical performances

Jae Won Na, Yeong Gyu Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with dual stacked active layers of different molarities are fabricated to improve their electrical performances. By controlling the molarities, the IGZO TFTs exhibit an enhanced field-effect mobility and positive bias stress stability.

Original language	English
Pages (from-to)	1224-1227
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	46
Issue number	Book 3
DOIs	https://doi.org/10.1002/sdtp.10068
Publication status	Published - 2015 Jun 1
Event	2015 SID International Symposium - San Jose, United States Duration: 2015 Jun 4 → …

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011-0028819).

Publisher Copyright:
© 2015 SID.

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/sdtp.10068

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title = "Interface location controlled dual stacked solution-processed In-Ga-Zn-0 thin film transistors for improved electrical performances",

abstract = "Indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with dual stacked active layers of different molarities are fabricated to improve their electrical performances. By controlling the molarities, the IGZO TFTs exhibit an enhanced field-effect mobility and positive bias stress stability.",

author = "Na, {Jae Won} and Kim, {Yeong Gyu} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011-0028819). Publisher Copyright: {\textcopyright} 2015 SID.; 2015 SID International Symposium ; Conference date: 04-06-2015",

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Interface location controlled dual stacked solution-processed In-Ga-Zn-0 thin film transistors for improved electrical performances

Abstract

Bibliographical note

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