Interface roughness effect between gate oxide and metal gate on dielectric property

J. Y. Son, W. J. Maeng, Woo Hee Kim, Y. H. Shin, Hyungjun Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)


We report a simple theoretical model based on experimental data about the interface roughness effect between gate oxide and metal gate on dielectric. From the analytic approach, we confirm that the increase in interface roughness generates the decrease in the dielectric constant as well as the increase in the leakage current. We checked the interface roughness effect between high-κ HfO2 gate oxides and Ru gates by atomic layer deposition (ALD) and physical vapor deposition (PVD). The ALD Ru gate showed better dielectric properties (high dielectric constant and low leakage current) and lower interface roughness than the PVD Ru metal gate.

Original languageEnglish
Pages (from-to)3892-3895
Number of pages4
JournalThin Solid Films
Issue number14
Publication statusPublished - 2009 May 29


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this